摘要:
A spatial light modulator includes a substrate, a phase change material cell on the substrate, the phase change material cell including an electrical heater on the substrate, an optical reflector layer on the electrical heater, and a phase change material layer on the optical reflector layer.
摘要:
A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.
摘要:
A neuroelectric sensor and stimulator system includes a first antenna, a reader coupled to the first antenna for transmitting stimulation controls and power to a second antenna, and for receiving sensor data transmitted from the second antenna via the first antenna, and at least one neuroelectric sensor stimulator array including the second antenna, a rectifier coupled to the second antenna for extracting power transmitted from the first antenna, a controller coupled to the second antenna for decoding controls transmitted from the first antenna to the second antenna for the neuroelectric sensor stimulator array, a plurality of sensors, a multiplexer coupled to the controller and to the plurality of sensors for selecting a single sensor, and a plurality of stimulators coupled to the controller for stimulating neurons, wherein the rectifier, the controller, the plurality of sensors, the multiplexer, and the plurality of stimulators include graphene.
摘要:
A field effect transistor includes a substrate, a first graphene (Gr) layer on the substrate, a second graphene (Gr) layer on the substrate, a fluorographene (GrF) layer on the substrate and between the first and second graphene layers, a first ohmic contact on the first graphene layer, a second ohmic contact on the second graphene layer, a gate aligned over the fluorographene layer, and a gate dielectric between the gate and the fluorographene layer and between the gate and the first and second ohmic contacts.
摘要:
An electric field-controlled refractive index tunable device includes a phase change correlated transition metal oxide layer, and E-field responsive charge dopants. The E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer.
摘要:
A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.
摘要:
A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.
摘要:
An optical apparatus may comprise: an electrically reconfigurable optical layer comprising at least one phase-change material, wherein an optical property of the phase-change material is reconfigurable by an electric field; an optically transparent top electrode and a bottom electrode, the top and bottom electrodes configured to apply the electric field to the electrically reconfigurable optical layer, wherein the electrically reconfigurable optical layer is disposed between the optically transparent top electrode and the bottom electrode; and a colossal-K dielectric layer disposed between the electrically reconfigurable optical layer and the bottom electrode. The phase-change material of the electrically reconfigurable optical layer may comprise phase-change nickelate or tungsten oxide. The phase-change material of the electrically reconfigurable optical layer may have a perovskite structure. The phase-change nickelate or tungsten oxide may enable to actuate large refractive index changes of more than 1 in infrared wavelength spectrums at high speeds of phase reconfiguration of more than 1 kHz by applying the electric field to the phase-change material.
摘要:
A field effect transistor includes a substrate, a first graphene (Gr) layer on the substrate, a second graphene (Gr) layer on the substrate, a fluorographene (GrF) layer on the substrate and between the first and second graphene layers, a first ohmic contact on the first graphene layer, a second ohmic contact on the second graphene layer, a gate aligned over the fluorographene layer, and a gate dielectric between the gate and the fluorographene layer and between the gate and the first and second ohmic contacts.
摘要:
An apparatus, system, and/or method are described to enable optically transparent reconfigurable integrated electrical components, such as antennas and RF circuits to be integrated into an optically transparent host platform, such as glass. In one embodiment, an Ag NW film may be configured as a transparent conductor for antennas and/or as interconnects for passive circuit components, such as capacitors or resistors. Ag NW may also be used as transmission lines and/or interconnect overlays for devices. A graphene film may also be configured as active channel material for making active RF devices, such as amplifiers and switches.
摘要翻译:描述了一种装置,系统和/或方法,以实现光学透明的可重新配置的集成电组件,例如要集成到诸如玻璃的光学透明主机平台中的天线和RF电路。 在一个实施例中,Ag NW膜可以被配置为用于天线的透明导体和/或用作无源电路部件(例如电容器或电阻器)的互连。 Ag NW也可以用作设备的传输线和/或互连覆盖。 石墨烯膜还可以被配置为用于制造有源RF器件(例如放大器和开关)的有源沟道材料。