公开(公告)号：US20170010527A1

公开(公告)日：2017-01-12

申请号：US15275719

申请日：2016-09-26

Applicant: HOYA CORPORATION

Inventor： Toshihiko ORIHARA ,  Kazuhiro HAMAMOTO ,  Hirofumi KOZAKAI ,  Youichi USUI ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/48 ,  H01L21/308 ,  G03F7/20 ,  G03F1/22 ,  G03F7/16

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

Abstract translation: 公开了一种用于光刻的掩模空白基板，其中形成基板的转印图案的主表面具有通过测量1μm×1的面积获得的不大于0.15nm的均方根粗糙度（Rms） 具有原子力显微镜，并且在不小于1μm-1的空间频率下具有不大于10nm 4的功率谱密度。

公开(公告)号：US20170023853A1

公开(公告)日：2017-01-26

申请号：US15134776

申请日：2016-04-21

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Hirofumi KOZAKAI ,  Youichi USUI ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/22 ,  G03F1/60 ,  H01L21/033 ,  G03F7/20

CPC classification number: G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Abstract translation: 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） 通过用原子力显微镜测量在基板一侧的主表面中的面积为1μm×1μm的轴承面积（％）和轴承深度（nm）之间的关系，≤1.2nm，其中， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30分别表示承载面积为30％的轴承深度和轴承面积 70％。

公开(公告)号：US20190384157A1

公开(公告)日：2019-12-19

申请号：US16490010

申请日：2018-03-01

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Junichi HORIKAWA ,  Takahiro ONOUE ,  Mizuki KATAOKA

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

公开(公告)号：US20180081264A1

公开(公告)日：2018-03-22

申请号：US15824227

申请日：2017-11-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Hirofumi KOZAKAI ,  Youichi USUI ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/22 ,  H01L21/033 ,  G03F1/50 ,  G03F1/60 ,  G03F7/20

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US20180275507A1

公开(公告)日：2018-09-27

申请号：US15980783

申请日：2018-05-16

Applicant: HOYA CORPORATION

Inventor： Toshihiko ORIHARA ,  Kazuhiro HAMAMOTO ,  Hirofumi KOZAKAI ,  Youichi USUI ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/48 ,  H01L21/308 ,  G03F1/22 ,  G02B5/08 ,  G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/16 ,  C03C17/36 ,  C03C23/00 ,  C03C3/06 ,  C03C17/34

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

公开(公告)号：US20170131629A1

公开(公告)日：2017-05-11

申请号：US15417846

申请日：2017-01-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/60 ,  G03F7/20 ,  G03F1/84 ,  G03F1/24 ,  G03F1/80

CPC classification number: G03F1/60 ,  G03F1/24 ,  G03F1/80 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2004

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

公开(公告)号：US20150331312A1

公开(公告)日：2015-11-19

申请号：US14655190

申请日：2013-12-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/60 ,  G03F1/80 ,  G03F7/20 ,  G03F1/24

CPC classification number: G03F1/60 ,  G03F1/24 ,  G03F1/80 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2004

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

Abstract translation: 本发明的目的是提供一种掩模板基板等，即使使用使用光的高灵敏度缺陷检查装置，由于减少包括伪缺陷在内的检测缺陷的数量，能够可靠地检测临界缺陷 的各种波长。 本发明涉及一种用于光刻的掩模坯料基板，其中通过测量0.14mm×0.1mm的区域得到的空间频率为1×10 -2μm-1 -1μm-1的功率谱密度 用白光干涉仪在640×480像素上形成转印图案的掩模坯料基板的主表面不大于4×106nm 4，空间频率处的功率谱密度不为 通过用原子力显微镜测量主表面上的1μm×1μm的区域获得的小于1μm的不超过10nm 4。