公开(公告)号：US20210311382A1

公开(公告)日：2021-10-07

申请号：US17265990

申请日：2019-08-08

Applicant: HOYA CORPORATION

Inventor： Mizuki KATAOKA ,  Yohei IKEBE

IPC: G03F1/24 ,  G03F1/54

Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
The reflective mask blank comprises a substrate, a multi-layer reflective film disposed on the substrate, and an absorbent body film disposed on the multi-layer reflective film, and is characterized in that: the absorbent body film includes, in at least a part thereof, at least one element with a high absorption coefficient, chosen from the group consisting of cobalt (Co) and nickel (Ni), and an element that increases the speed of dry etching; the absorbent body film includes a lower-surface region that includes a surface on the substrate side and an upper-surface region that includes a surface on the side opposite the substrate; and the concentration (atomic percentage) of the element with the high absorption coefficient in the upper-surface region is greater than the concentration (atomic percentage) of the element with the high absorption coefficient in the lower-surface region.

公开(公告)号：US20220091498A1

公开(公告)日：2022-03-24

申请号：US17423988

申请日：2020-03-06

Applicant: HOYA CORPORATION

Inventor： Mizuki KATAOKA

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/027

Abstract: Provided is a reflection-type mask blank which enables the further reduction of the shadowing effect of a reflection-type mask. A reflection-type mask blank in which a multilayer reflection film and an absorber film are arranged in this order on a substrate, the reflection-type mask blank being characterized in that the absorber film is made from a material comprising an amorphous metal containing at least one element selected from tin (Sn), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), antimony (Sb), platinum (Pt), iridium (Ir), iron (Fe), gold (Au), aluminum (Al), copper (Cu), zinc (Zn) and silver (Ag) and the absorber film has a film thickness of 55 nm or less.

公开(公告)号：US20190384157A1

公开(公告)日：2019-12-19

申请号：US16490010

申请日：2018-03-01

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Junichi HORIKAWA ,  Takahiro ONOUE ,  Mizuki KATAOKA

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).