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公开(公告)号：US20240393675A1
公开(公告)日：2024-11-28
申请号：US18797169
申请日：2024-08-07
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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公开(公告)号：US20230076438A1
公开(公告)日：2023-03-09
申请号：US17800154
申请日：2021-02-17
Applicant: HOYA CORPORATION
Inventor： Ikuya FUKASAWA , Yohei IKEBE
Abstract: Provided is a reflective mask blank.
The reflective mask blank has a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate; the thin film consists of a single layer structure consisting of a ruthenium-containing layer at least containing ruthenium, nitrogen, and oxygen or a multilayer structure including the ruthenium-containing layer; and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P1 is the maximum value of diffraction intensity within a diffraction angle 2θ ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 2θ ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0.-
3.发明申请公开(公告)号：US20190265585A1
公开(公告)日：2019-08-29
申请号：US16343505
申请日：2017-10-18
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
IPC: G03F1/24 , G03F7/20 , G03F1/38 , G03F1/54 , H01L21/033
Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
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4.发明申请METHOD FOR MANUFACTURING REFLECTIVE MASK BLANK, AND METHOD FOR MANUFACTURING REFLECTIVE MASK 审中-公开用于制造反射掩模层的方法以及制造反射掩模的方法公开(公告)号：US20160004153A1
公开(公告)日：2016-01-07
申请号：US14768787
申请日：2014-02-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Kazuhiro HAMAMOTO , Yohei IKEBE
CPC classification number: G03F1/84 , C23C14/35 , C23C14/46 , G03F1/24 , G03F1/38 , G06T7/0004 , G06T2207/30148 , G06T2207/30204
Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
Abstract translation: 一种制造反射掩模坯料的方法，包括形成在基板上以反射EUV光的多层反射膜; 以及形成在多层反射膜上的层叠膜。 该方法包括以下步骤：将多层反射膜沉积在衬底上以形成多层反射膜形成的衬底; 对多层反射膜形成基板进行缺陷检查; 将层叠膜沉积在多层反射膜形成基板的多层反射膜上; 形成层叠膜的上部的基准标记，从而形成包含基准标记的反射掩模坯料，基准标记作为缺陷信息中缺陷位置的基准; 并通过使用基准标记作为基准进行反射型掩模毛坯的缺陷检查。
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公开(公告)号：US20240231216A1
公开(公告)日：2024-07-11
申请号：US18561499
申请日：2022-05-31
Applicant: HOYA CORPORATION
Inventor： Takuro ONO , Yohei IKEBE
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A mask blank comprises a substrate with a multilayer reflective film and a pattern-forming thin film formed on a main surface of the substrate in this order. The thin film contains tantalum, molybdenum, and nitrogen. In the thin film, a ratio of a nitrogen content [atomic %] to a total content [atomic %] of tantalum and molybdenum is 0.15 or more.
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Patent Agency Ranking
公开(公告)号：US20240184193A1
公开(公告)日：2024-06-06
申请号：US18556839
申请日：2022-05-06
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Takashi UCHIDA
Abstract: [Problem] Provided is a mask blank
[Solution] A mask blank comprises a multilayer reflective film and a pattern forming thin film in this order on a main surface of a substrate. The thin film is made of a material containing a metal, and when a refractive index of the thin film with respect to light having a wavelength λL of 13.2 nm is represented by nL, a refractive index of the thin film with respect to light having a wavelength λM of 13.5 nm is represented by nM, a refractive index of the thin film with respect to light having a wavelength λH of 13.8 nm is represented by nH, and a coefficient P=[(1−nH)/λH−(1−nL)/λL)]/[(1−nM)/λM] is satisfied, an absolute value of the coefficient P is 0.09 or less.-
公开(公告)号：US20210255536A1
公开(公告)日：2021-08-19
申请号：US17227655
申请日：2021-04-12
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US20210208498A1
公开(公告)日：2021-07-08
申请号：US17056713
申请日：2019-05-24
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
IPC: G03F1/32
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
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公开(公告)号：US20200310239A1
公开(公告)日：2020-10-01
申请号：US16754306
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tsutomu SHOKI , Yohei IKEBE
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
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10.发明公开公开(公告)号：US20230333459A1
公开(公告)日：2023-10-19
申请号：US18025461
申请日：2021-09-24
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE
Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of forming a transfer pattern of diversified fine pattern shapes formed on a transferred substrate and having a transfer pattern capable of performing EUV exposure with a high throughput
A reflective mask blank comprises a multilayer reflective film and an absorber film in this order on a substrate. When normalization is performed with a value of an evaluation function of a film having a refractive index of 0.95 and an extinction coefficient of 0.03 as 1, the absorber film comprises a material having such a refractive index and an extinction coefficient that a value of the normalized evaluation function of the absorber film is 1.015 or more, and the evaluation function is a product of a normalized image log slope (NILS) and a threshold of light intensity for exposure of a predetermined resist to light.
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