Invention Application
US20170010527A1 MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
审中-公开
掩模基板，具有多层反射膜的基板，透射掩模层，反射掩模和半导体器件制造方法
- Patent Title: MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
- Patent Title (中): 掩模基板，具有多层反射膜的基板，透射掩模层，反射掩模和半导体器件制造方法
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Application No.: US15275719Application Date: 2016-09-26
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Publication No.: US20170010527A1Publication Date: 2017-01-12
- Inventor: Toshihiko ORIHARA , Kazuhiro HAMAMOTO , Hirofumi KOZAKAI , Youichi USUI , Tsutomu SHOKI , Junichi HORIKAWA
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2012-074626 20120328
- Main IPC: G03F1/48
- IPC: G03F1/48 ; H01L21/308 ; G03F7/20 ; G03F1/22 ; G03F7/16
Abstract:
Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
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