公开(公告)号：US3523819A

公开(公告)日：1970-08-11

申请号：US3523819D

申请日：1968-01-16

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  UEHARA KEIJIRO

IPC: H01L21/306 ,  H01L21/316 ,  H01L23/31 ,  H01B3/08 ,  H01B3/10

CPC classification number: H01L21/31612 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/0226 ,  H01L21/02307 ,  H01L21/30604 ,  H01L23/3157 ,  H01L2924/0002 ,  Y10T428/24802 ,  H01L2924/00

公开(公告)号：US3532539A

公开(公告)日：1970-10-06

申请号：US3532539D

申请日：1968-11-04

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  UEHARA KEIJIRO

IPC: C23C16/40 ,  H01L21/316 ,  H01L23/31 ,  H01L29/00 ,  H01L1/10

CPC classification number: H01L23/3157 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/31612 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/10253 ,  Y10S148/043 ,  Y10S148/118 ,  Y10T428/24802 ,  H01L2924/00

公开(公告)号：US3447237A

公开(公告)日：1969-06-03

申请号：US3447237D

申请日：1964-07-29

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  UEHARA KEIJIRO

IPC: C23C8/02 ,  C23C8/10 ,  C23C14/58 ,  C23C26/00 ,  H01L23/29 ,  H01L7/62

CPC classification number: C23C26/00 ,  C23C8/02 ,  C23C8/10 ,  C23C14/58 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/145 ,  H01L2924/00

公开(公告)号：US3660171A

公开(公告)日：1972-05-02

申请号：US3660171D

申请日：1969-12-24

Applicant: HITACHI LTD

Inventor： TSUCHIMOTO TAKASHI ,  TOKUYAMA TAKASHI ,  KOMATSUBARA KIICHI

IPC: H01L21/00 ,  H01L21/265 ,  H01L29/00 ,  H01L7/54

CPC classification number: H01L21/265 ,  H01L21/00 ,  H01L29/00

Abstract: A method for producing a transistor structure utilizing ion implantation, comprising the steps of implanting ions of baseforming impurity into a predetermined portion of a surface of a semiconductor body serving as a collector and heated to a temperature above 600* C. but below the melting point of the semiconductor to form a base region, and thereafter implanting ions of emitter-forming impurity into a predetermined portion of the surface of said base region heated to a temperature in the range of 400* to 600* C. to form an emitter region.

Abstract translation: 一种利用离子注入制造晶体管结构的方法，包括以下步骤：将基底形成杂质的离子注入用作集电体的半导体本体的表面的预定部分中，并加热至高于600℃但低于 熔点以形成基区，然后将发射极形成杂质的离子注入加热到400℃至600℃范围内的温度范围内的所述基区的表面的预定部分中，以形成发射极 地区。

公开(公告)号：US3551760A

公开(公告)日：1970-12-29

申请号：US3551760D

申请日：1967-03-23

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  NISHIMATSU SHIGERU ,  UEHARA KEIJIRO ,  MORI TAKAAKI

IPC: H01L29/00 ,  H01L29/06 ,  H01L29/73 ,  H01L29/86 ,  H01L11/06

CPC classification number: H01L29/73 ,  H01L29/00 ,  H01L29/06 ,  H01L29/86 ,  Y10S148/049

公开(公告)号：US3445280A

公开(公告)日：1969-05-20

申请号：US3445280D

申请日：1965-08-09

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  UEHARA KEIJIRO

IPC: C23C16/02 ,  C23C16/40 ,  H01L21/316 ,  H01B1/00 ,  C23C13/00

CPC classification number: H01L21/02164 ,  C23C16/0272 ,  C23C16/402 ,  H01L21/02271 ,  H01L21/31612 ,  Y10S148/043 ,  Y10S148/049 ,  Y10S148/118

公开(公告)号：US3632433A

公开(公告)日：1972-01-04

申请号：US3632433D

申请日：1968-03-26

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  MORI TAKAAKI

IPC: H01L21/00 ,  H01L23/29 ,  H01L29/00 ,  H01L1/10 ,  H01L1/14

CPC classification number: H01L23/291 ,  H01L21/00 ,  H01L24/05 ,  H01L29/00 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2224/8592 ,  H01L2924/12036 ,  H01L2924/14 ,  Y10T428/24917 ,  H01L2924/00

Abstract: A first insulating film of silicon dioxide is provided on the surface of a semiconductor device, and a second silicon dioxide layer containing uniformly a small amount of phosphorus is deposited from the vapor phase on said first insulating film, thereby realizing stable passivation of the electrical characteristics of said semiconductor device. The waterproof property and accurate etching of said films are also accomplished.

Abstract translation: 在半导体器件的表面上设置有二氧化硅的第一绝缘膜，并且从所述第一绝缘膜上的气相沉积含有少量均匀的磷的第二二氧化硅层，从而实现电特性的稳定钝化 的所述半导体器件。 还实现了所述膜的防水性能和精确蚀刻。

公开(公告)号：US3615875A

公开(公告)日：1971-10-26

申请号：US3615875D

申请日：1969-09-29

Applicant: HITACHI LTD

Inventor： MORITA TODAHISA ,  TOKUYAMA TAKASHI ,  TSUCHIMOTO TAKASHI ,  MIYAZAKI TAKAO ,  NISHIMATSU SHIGERU ,  IKEDA TAKAHIDE ,  SANO HISUMI ,  HORIUCHI MASATADA

IPC: H01L21/00 ,  H01L21/265 ,  H01L29/00 ,  H01L29/73 ,  H01L7/54

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L21/265 ,  H01L29/73 ,  Y10S438/965

Abstract: A semiconductor body acting as a collector is directed at a predetermined surface area by an inert ion beam from such a direction as not to produce a channeling effect in the body, whereby obtaining an amorphous surface region thereat, then directed at a larger surface area including said predetermined surface area by an active impurity ion beam of the conductivity type opposite to said body from a direction producing the channeling effect in the body, thereby obtaining a base region in the semiconductor body with a PN junction therebetween which has a partial projection in its bottom part, and further directed at said predetermined surface area by an active impurity ion beam of the same conductivity type as that of the body from the channeling-effect-providing direction, thereby obtaining an emitter region, and finally heat-treating, so that a transistor without defects due to the emitter dip effect is obtained.

公开(公告)号：US3607449A

公开(公告)日：1971-09-21

申请号：US3607449D

申请日：1969-09-23

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  MIYAZAKI TAKAO ,  TSUCHIMOTO TAKASHI ,  MORITA TADAHISA ,  IKEDA TAKAHIDE ,  NISHIMATSU SHIGERU ,  SANO HISUMI ,  HORIUCHI MASATADA

IPC: H01L29/73 ,  H01L21/225 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/3215 ,  H01L21/329 ,  H01L21/331 ,  H01L23/29 ,  H01L7/54

CPC classification number: H01L21/3215 ,  H01L21/2255 ,  H01L21/31155 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a method of forming a PN junction comprising the steps of implanting impurity ions into an insulating layer formed on the surface of a semiconductor substrate and then diffusing the implanted impurity ions into the surface layer of the semiconductor substrate thereunder.