公开(公告)号：US3615875A

公开(公告)日：1971-10-26

申请号：US3615875D

申请日：1969-09-29

Applicant: HITACHI LTD

Inventor： MORITA TODAHISA ,  TOKUYAMA TAKASHI ,  TSUCHIMOTO TAKASHI ,  MIYAZAKI TAKAO ,  NISHIMATSU SHIGERU ,  IKEDA TAKAHIDE ,  SANO HISUMI ,  HORIUCHI MASATADA

IPC: H01L21/00 ,  H01L21/265 ,  H01L29/00 ,  H01L29/73 ,  H01L7/54

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L21/265 ,  H01L29/73 ,  Y10S438/965

Abstract: A semiconductor body acting as a collector is directed at a predetermined surface area by an inert ion beam from such a direction as not to produce a channeling effect in the body, whereby obtaining an amorphous surface region thereat, then directed at a larger surface area including said predetermined surface area by an active impurity ion beam of the conductivity type opposite to said body from a direction producing the channeling effect in the body, thereby obtaining a base region in the semiconductor body with a PN junction therebetween which has a partial projection in its bottom part, and further directed at said predetermined surface area by an active impurity ion beam of the same conductivity type as that of the body from the channeling-effect-providing direction, thereby obtaining an emitter region, and finally heat-treating, so that a transistor without defects due to the emitter dip effect is obtained.