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25 条记录 (耗时 0.018 秒)

    Focused ion beam apparatus and control method thereof
    2.
    发明授权
    Focused ion beam apparatus and control method thereof 有权
    聚焦离子束装置及其控制方法

    公开(公告)号：US09418817B2

    公开(公告)日：2016-08-16

    申请号：US14218020

    申请日：2014-03-18

    申请人： HITACHI HIGH-TECH SCIENCE CORPORATION

    发明人： Fumio Aramaki ,  Yasuhiko Sugiyama ,  Hiroshi Oba

    IPC分类号： H01J37/08

    CPC分类号： H01J37/08 ,  H01J2237/002 ,  H01J2237/0807

    摘要： A focused ion beam apparatus has an emitter for emitting an ion beam, an ion source chamber accommodating the emitter, a cooling unit and a heating unit for cooling and heating, respectively, the emitter, and an ion source gas supply section for supplying to the ion source chamber an ion source gas that is exchangeable with another ion source gas. A control section controls an operation of the cooling unit such that a temperature of a wall surface contacting the ion source gas in the ion source chamber is maintained at a temperature higher than a temperature at which the ion source gas before and after the exchange freezes. The control section controls an operation of the heater so that the emitter is temporarily heated to release the ion source gas from a surface of the emitter before the ion source gas is exchanged with the other ion source gas.

    摘要翻译： 聚焦离子束装置具有用于发射离子束的发射体，容纳发射体的离子源室，分别用于冷却和加热发光体的冷却单元和加热单元，以及用于向 离子源室可与另一离子源气体交换的离子源气体。 控制部控制冷却单元的动作，使得与离子源室中的离子源气体接触的壁面的温度保持在比交换前后的离子源气体冻结的温度高的温度。 控制部分控制加热器的操作，使得在将离子源气体与其它离子源气体交换之前，发射体被暂时加热以从发射器的表面释放离子源气体。

    Charged particle beam apparatus, composite charged particle beam apparatus, and control method for charged particle beam apparatus
    4.
    发明授权
    Charged particle beam apparatus, composite charged particle beam apparatus, and control method for charged particle beam apparatus 有权

    公开(公告)号：US11276555B2

    公开(公告)日：2022-03-15

    申请号：US17072678

    申请日：2020-10-16

    申请人： HITACHI HIGH-TECH SCIENCE CORPORATION

    发明人： Yasuhiko Sugiyama ,  Koji Nagahara

    IPC分类号： H01J37/28 ,  H01J37/12 ,  H01J37/147

    摘要： The charged particle beam apparatus includes: a charged particle source configured to generate charged particles; a plurality of scanning electrodes configured to generate electric fields for deflecting charged particles that are emitted by applying an acceleration voltage to the charged particle source, and applying an extraction voltage to an extraction electrode configured to extract the charged particles; an electrostatic lens, which is provided between the plurality of scanning electrodes and a sample table, and is configured to focus a charged particle beam deflected by the plurality of scanning electrodes; and a processing unit configured to obtain a measurement condition, and set each of scanning voltages to be applied to the plurality of scanning electrodes based on the obtained measurement condition.

    Composite charged particle beam apparatus and control method thereof
    5.
    发明授权
    Composite charged particle beam apparatus and control method thereof 有权

    公开(公告)号：US11017982B2

    公开(公告)日：2021-05-25

    申请号：US16785362

    申请日：2020-02-07

    申请人： HITACHI HIGH-TECH SCIENCE CORPORATION

    发明人： Yasuhiko Sugiyama ,  Naoko Hirose ,  Hiroshi Oba

    IPC分类号： H01J37/248 ,  H01J37/28 ,  H01J37/08

    摘要： Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

    Focused ion beam apparatus with precious metal emitter surface
    7.
    发明授权
    Focused ion beam apparatus with precious metal emitter surface 有权
    聚焦离子束设备，具有贵金属发射体表面

    公开(公告)号：US09336979B2

    公开(公告)日：2016-05-10

    申请号：US14591843

    申请日：2015-01-07

    申请人： HITACHI HIGH-TECH SCIENCE CORPORATION

    发明人： Anto Yasaka ,  Fumio Aramaki ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai ,  Osamu Matsuda

    IPC分类号： H01J27/02 ,  H01J37/08 ,  H01J37/305 ,  H01J27/26

    CPC分类号： H01J27/024 ,  H01J27/26 ,  H01J37/08 ,  H01J37/3056 ,  H01J2237/0807 ,  H01J2237/182

    摘要： A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.

    摘要翻译： 聚焦离子束装置具有离子源室，其中设置有用于发射离子的发射极。 发射体的表面由贵金属形成，例如铂，钯，铱，铑或金。 气体供给单元向离子源室供给氮气，使得氮气吸附在发射体的表面。 提取电极与发射极间隔开，并向提取电极施加电压，使吸附的氮气离子化，并以离子束形式提取氮离子。 温度控制单元控制发射器的温度。

    Method for fabricating emitter
    8.
    发明授权
    Method for fabricating emitter 有权
    制造发射体的方法

    公开(公告)号：US08999178B2

    公开(公告)日：2015-04-07

    申请号：US14278760

    申请日：2014-05-15

    申请人： Hitachi High-Tech Science Corporation

    发明人： Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Tomokazu Kozakai ,  Osamu Matsuda ,  Anto Yasaka

    IPC分类号： C25F3/00 ,  H01J27/02 ,  H01J9/02 ,  H01J1/15 ,  H01J1/304 ,  H01J9/04 ,  H01J37/08 ,  H01J37/305 ,  H01J37/26

    CPC分类号： H01J27/02 ,  H01J1/15 ,  H01J1/3044 ,  H01J9/02 ,  H01J9/025 ,  H01J9/04 ,  H01J37/08 ,  H01J37/26 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31749

    摘要： A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.

    摘要翻译： 一种用于制造尖锐的针状发射体的方法，该方法包括：电解抛光导电发射体材料的端部，使其朝其尖端部分逐渐变细; 进行第一蚀刻，其中用电荷粒子束照射发射体材料的电解抛光部分以形成具有包括尖端部分的顶点的棱锥状的锐化部分; 进行第二蚀刻，其中尖端部分通过场辅助气体蚀刻进一步锐化，同时通过场离子显微镜观察尖端部分处的晶体结构，并将尖端部分的前缘处的原子数保持在预定的 数量以下 并且加热发射体材料以将原子布置在尖锐部分的尖端部分的金字塔形状。