Abstract:
To stabilize automated MS, provided is a charged particle beam apparatus, which is configured to automatically fabricate a sample piece from a sample, the charged particle beam apparatus including: a charged particle beam irradiation optical system configured to radiate a charged particle beam; a sample stage configured to move the sample that is placed on the sample stage; a sample piece transportation unit configured to hold and convey the sample piece separated and extracted from the sample; a holder fixing base configured to hold a sample piece holder to which the sample piece is transported; and a computer configured to perform control of a position with respect to a target, based on: a result of second determination about the position, which is executed depending on a result of first determination about the position; and information including an image that is obtained by irradiation with the charged particle beam.
Abstract:
ProblemTo automatically repeat an operation of extracting and transferring a sample piece, which is formed by processing a sample using an ion beam, to a sample piece holder.SolutionA charged particle beam includes: a computer that controls a needle actuating mechanism so as to approach a needle to a sample piece using a template formed from an absorbed current image obtained by irradiating the needle with a charged particle beam and a tip coordinate of the needle acquired from a secondary electron image obtained by irradiating the needle with the charged particle beam.
Abstract:
A cross section processing method and a cross section processing apparatus are provided in which it is possible to form a flat cross section in a sample composed of a plurality of substances having different hardness by a focused ion beam. The etching of a processing area is performed while variably controlling the irradiation interval, the irradiation time, or the like of a focused ion beam based on cross section information of an SEM image obtained by the observation of a cross section. In this way, even if a sample is composed of a plurality of substances having different hardness, it is possible to form a flat observation surface with a uniform etching rate.
Abstract:
Provided is a charged particle beam apparatus including a focused ion beam column, a sample holder, a stage supporting the sample holder, a securing member rotating unit, a stage driving unit, and a control device. The sample holder includes a securing member fixing a sample. The securing member rotating unit rotates the securing member around a first rotational axis and a second rotational axis. The stage driving unit translates the stage in three dimensions and rotates the stage around a third rotational axis. The control device acquires a correction value for correcting a change in a position of a center of rotation for rotation around at least one among a first rotational axis, a second rotational axis, and a third rotational axis. The control device translates the stage according to the correction value.
Abstract:
A charged particle beam apparatus includes: a charged particle beam column configured to irradiate an irradiation target with a charged particle beam; a detector configured to detect secondary charged particles emitted from the irradiation target by the irradiation of the charged particle beam; a needle arranged in an irradiation area of the charged particle beam; a needle actuator configured to actuate the needle; and a controller configured to control the needle actuator to actuate the needle along a movement route that is configured by a preset target position and preset way points. The controller controls the needle actuator to set an actuating direction of the needle for each of the way points.
Abstract:
A charged particle beam apparatus including a column irradiating a sample with a charged particle beam, a detector detecting a secondary particle emitted from the sample, an image data generating section generating image data indicating two-dimensional distribution of an amount of the secondary particle detected by the detector, and a controller that respectively sets first and second position adjustment irradiation frames for first and second beam condition on a surface of the sample in the image data, form a first and second irradiation traces by respectively irradiating the first and second position adjustment irradiation frames with the charged particle beams of the first and second beam conditions, correct a position of the second processing irradiation frame, based on a position displacement amount between a predetermined position of the first irradiation trace and a predetermined position of the second irradiation trace.
Abstract:
A charged particle beam apparatus includes: an electron beam irradiation unit irradiating a sample with electron beams having a first irradiation axis; a rotation stage holding the sample and having a rotation axis in a direction perpendicular to the first irradiation axis; an ion beam irradiation unit irradiating the sample with ion beams having a second irradiation axis that is substantially parallel to the rotation axis; a detection unit detecting at least one of charged particles and X rays generated via the sample by the irradiation with the ion beams and electron beams; and a gaseous ion beam irradiation unit irradiating the sample with gaseous ion beams.
Abstract:
A cross-section processing-and-observation method includes: a cross-section exposure step of irradiating a sample with a focused ion beam to expose a cross-section of the sample; a cross-sectional image acquisition step of irradiating the cross-section with an electron beam to acquire a cross-sectional image of the cross-section; and a step of repeatedly performing the cross-section exposure step and the cross-sectional image acquisition step along a predetermined direction of the sample at a setting interval to acquire a plurality of cross-sectional images of the sample. In the cross-sectional image acquisition step, a cross-sectional image is acquired under different condition settings for a plurality of regions of the cross-section.
Abstract:
This machining method includes: a machining step of irradiating a sample constituted from a stack of multiple layers with a focused ion beam so as to machine a cross-section of the sample by a predetermined amount; an image generation step of generating an observation image of the cross-section of the sample by irradiating the sample with an electron beam after the machining step is ended; and a specific-layer determination step of determining whether a specific layer of the multiple layers is exposed based on the observation image.
Abstract:
The present invention provides a control method for a charged particle beam device for irradiating a sample in which a plurality of layers is laminated with a focused ion beam to process a cross-section of the sample at a processing angle that is a prescribed angle. The control method includes: an image generation step for irradiating the sample with an electron beam, detecting secondary electrons or reflected electrons generated from the sample, and generating an observation image of a cross-section of the sample based on results of detection; an angle deviation calculation step for calculating the angle deviation between the angle of the cross-section and the processing angle based on the observation image; and a control step for controlling orientation of the sample or a direction of radiation with the electron beam so as to eliminate the angle deviation calculated in the angle deviation calculation step.