公开(公告)号：US11258976B2

公开(公告)日：2022-02-22

申请号：US16754239

申请日：2018-10-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Sho Morita ,  Takayuki Kurashina ,  Hiroo Yamamoto

IPC: H04N5/374 ,  H04N5/378 ,  H03F3/12 ,  H03F3/08 ,  H03M1/06 ,  H01L27/146 ,  H04N5/3745 ,  H03F3/45

Abstract: A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.

公开(公告)号：US10088579B2

公开(公告)日：2018-10-02

申请号：US15735389

申请日：2016-07-22

Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD. ,  Japan Aerospace Exploration Agency ,  HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke Matsuura ,  Yoshikatsu Kuroda ,  Kei Gemba ,  Tadayuki Takahashi ,  Shin Watanabe ,  Shin'ichiro Takeda ,  Hiroo Yamamoto ,  Kazumasa Kosugi ,  Kazuhisa Yamamura

IPC: G01T1/29 ,  G01T1/24

Abstract: A radiation measuring apparatus (20) includes a scatterer detector (10A), an absorber detector (10B) and a processing unit (12). Pixel electrodes (2) of the scatterer detector (10A) and the absorber detector (10B) are arranged such that a distance between centers of two neighbor pixel electrodes (2) is smaller than a mean free path of a recoil electron generated in the Compton scattering of an electromagnetic radiation. The processing unit (12) specifies and incidence direction of the electromagnetic radiation based on a recoiling direction to which the recoil electron recoils. In this way, an electron tracking-type Compton camera is realized which confines the incidence direction of the electromagnetic radiation by using the recoiling direction of the recoil electron in a Compton camera using a semiconductor detector.

公开(公告)号：US10480995B2

公开(公告)日：2019-11-19

申请号：US15550127

申请日：2015-11-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masatoshi Ishihara ,  Hiroo Yamamoto ,  Yoshiaki Ohshige

IPC: G01J1/04 ,  H01L27/14 ,  H01L27/144 ,  H04N5/225 ,  G01J5/06 ,  G01J1/02 ,  G01J1/42 ,  G01J5/00

Abstract: The signal processing board includes a plurality of signal processing circuits configured to process signals output from a plurality of pixels of an infrared detecting element. The signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board. The signal processing board includes a plurality of insulating layers that are stacked on a surface side opposing the semiconductor substrate. A plurality of signal processing circuits are placed in the circuit placement area. A heat-conducting layer is placed to be positioned on at least one of the insulating layers and in the element placement area, in the signal processing board. The heat-conducting layer has a heat conductivity that is higher than a heat conductivity of the insulating layers.

公开(公告)号：US12302018B2

公开(公告)日：2025-05-13

申请号：US17798999

申请日：2020-11-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito Mase ,  Hiroo Yamamoto ,  Harumichi Mori

IPC: H04N25/711 ,  H04N25/40

Abstract: Provided is a photosensor including a light receiving part generating electric charge according to incident light, a charge transfer gate configured to transfer the electric charge generated in the light receiving part, and a signal generation unit configured to generate a charge transfer signal applied to the charge transfer gate, in which the signal generation unit generates the charge transfer signal so that the charge transfer gate is brought into a charge transfer state in a first time range of a first period belonging to an n-th (n is an integer of 1 or more) frame and the charge transfer gate is brought into a charge transfer state in a second time range of a second period belonging to an m-th (m is an integer of 1 or more different from n) frame.

公开(公告)号：US11736835B2

公开(公告)日：2023-08-22

申请号：US17791004

申请日：2021-01-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Makoto Kobayashi ,  Chihiro Suzuki ,  Sho Morita ,  Hiroo Yamamoto

IPC: H04N25/778 ,  H03F3/16 ,  H01L31/0304 ,  H04N25/51

CPC classification number: H04N25/778 ,  H03F3/16 ,  H01L31/03046 ,  H03F2200/144

Abstract: A solid-state imaging device includes M pixel units to and a correction unit. The pixel unit includes a main amplifier, a capacitive element, a first switch, a second switch, a photodiode, a feedback capacitive element, and an initialization switch. The correction unit includes a null amplifier, a capacitive element, a first switch, and a second switch. An effective offset voltage of the main amplifier is small.

公开(公告)号：US11977048B2

公开(公告)日：2024-05-07

申请号：US17605263

申请日：2020-02-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Sho Morita ,  Toshiki Wakamori

IPC: G01N27/333 ,  G01N27/414

CPC classification number: G01N27/333 ,  G01N27/4141

Abstract: A smell sensor includes an ion sensor having a sensitive film, a substance adsorption film disposed on the sensitive film and configured to adsorb a smell substance to be detected, and an electrode configured to apply a reference voltage to the substance adsorption film. The substance adsorption film is in a state of releasing a proton in response to absorbing the smell substance.

公开(公告)号：US12196703B2

公开(公告)日：2025-01-14

申请号：US17627259

申请日：2020-05-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Sho Morita ,  Toshiki Wakamori

IPC: G01N27/30 ,  G01N27/00 ,  G01N27/413 ,  G01N27/414

Abstract: An ion detection device includes an ion sensor having a sensitive film immersed in an aqueous solution and outputting an output signal in accordance with a potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

公开(公告)号：US12055516B2

公开(公告)日：2024-08-06

申请号：US17627248

申请日：2020-05-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Sho Morita ,  Toshiki Wakamori

IPC: G01N27/414 ,  G01N33/00

CPC classification number: G01N27/4141 ,  G01N33/0031

Abstract: A smell detection device includes an ion sensor having a sensitive film and outputting an output signal in accordance with a potential change of the sensitive film, a substance adsorption film disposed on the sensitive film and changing its state by adsorbing a smell substance to be detected to cause the potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

公开(公告)号：US11450705B2

公开(公告)日：2022-09-20

申请号：US16777291

申请日：2020-01-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito Mase ,  Keiki Taguchi ,  Hajime Ishihara ,  Hiroo Yamamoto ,  Akihiro Shimada

IPC: H01L27/146 ,  G01J1/44 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/109

Abstract: A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

公开(公告)号：US11194026B2

公开(公告)日：2021-12-07

申请号：US16846823

申请日：2020-04-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito Mase ,  Keiki Taguchi ,  Hajime Ishihara ,  Hiroo Yamamoto ,  Akihiro Shimada

IPC: G01S7/4863 ,  G01S17/10

Abstract: A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.