公开(公告)号：US11736835B2

公开(公告)日：2023-08-22

申请号：US17791004

申请日：2021-01-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Makoto Kobayashi ,  Chihiro Suzuki ,  Sho Morita ,  Hiroo Yamamoto

IPC: H04N25/778 ,  H03F3/16 ,  H01L31/0304 ,  H04N25/51

CPC classification number: H04N25/778 ,  H03F3/16 ,  H01L31/03046 ,  H03F2200/144

Abstract: A solid-state imaging device includes M pixel units to and a correction unit. The pixel unit includes a main amplifier, a capacitive element, a first switch, a second switch, a photodiode, a feedback capacitive element, and an initialization switch. The correction unit includes a null amplifier, a capacitive element, a first switch, and a second switch. An effective offset voltage of the main amplifier is small.

公开(公告)号：US11977048B2

公开(公告)日：2024-05-07

申请号：US17605263

申请日：2020-02-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Sho Morita ,  Toshiki Wakamori

IPC: G01N27/333 ,  G01N27/414

CPC classification number: G01N27/333 ,  G01N27/4141

Abstract: A smell sensor includes an ion sensor having a sensitive film, a substance adsorption film disposed on the sensitive film and configured to adsorb a smell substance to be detected, and an electrode configured to apply a reference voltage to the substance adsorption film. The substance adsorption film is in a state of releasing a proton in response to absorbing the smell substance.

公开(公告)号：US11258976B2

公开(公告)日：2022-02-22

申请号：US16754239

申请日：2018-10-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Sho Morita ,  Takayuki Kurashina ,  Hiroo Yamamoto

IPC: H04N5/374 ,  H04N5/378 ,  H03F3/12 ,  H03F3/08 ,  H03M1/06 ,  H01L27/146 ,  H04N5/3745 ,  H03F3/45

Abstract: A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.

公开(公告)号：US12196703B2

公开(公告)日：2025-01-14

申请号：US17627259

申请日：2020-05-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Sho Morita ,  Toshiki Wakamori

IPC: G01N27/30 ,  G01N27/00 ,  G01N27/413 ,  G01N27/414

Abstract: An ion detection device includes an ion sensor having a sensitive film immersed in an aqueous solution and outputting an output signal in accordance with a potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

公开(公告)号：US12055516B2

公开(公告)日：2024-08-06

申请号：US17627248

申请日：2020-05-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Sho Morita ,  Toshiki Wakamori

IPC: G01N27/414 ,  G01N33/00

CPC classification number: G01N27/4141 ,  G01N33/0031

Abstract: A smell detection device includes an ion sensor having a sensitive film and outputting an output signal in accordance with a potential change of the sensitive film, a substance adsorption film disposed on the sensitive film and changing its state by adsorbing a smell substance to be detected to cause the potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.