公开(公告)号：US11736835B2

公开(公告)日：2023-08-22

申请号：US17791004

申请日：2021-01-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Makoto Kobayashi ,  Chihiro Suzuki ,  Sho Morita ,  Hiroo Yamamoto

IPC: H04N25/778 ,  H03F3/16 ,  H01L31/0304 ,  H04N25/51

CPC classification number: H04N25/778 ,  H03F3/16 ,  H01L31/03046 ,  H03F2200/144

Abstract: A solid-state imaging device includes M pixel units to and a correction unit. The pixel unit includes a main amplifier, a capacitive element, a first switch, a second switch, a photodiode, a feedback capacitive element, and an initialization switch. The correction unit includes a null amplifier, a capacitive element, a first switch, and a second switch. An effective offset voltage of the main amplifier is small.