公开(公告)号：US11450705B2

公开(公告)日：2022-09-20

申请号：US16777291

申请日：2020-01-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito Mase ,  Keiki Taguchi ,  Hajime Ishihara ,  Hiroo Yamamoto ,  Akihiro Shimada

IPC: H01L27/146 ,  G01J1/44 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/109

Abstract: A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

公开(公告)号：US11194026B2

公开(公告)日：2021-12-07

申请号：US16846823

申请日：2020-04-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito Mase ,  Keiki Taguchi ,  Hajime Ishihara ,  Hiroo Yamamoto ,  Akihiro Shimada

IPC: G01S7/4863 ,  G01S17/10

Abstract: A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.