公开(公告)号：US20210057271A1

公开(公告)日：2021-02-25

申请号：US16547474

申请日：2019-08-21

申请人： GLOBALFOUNDRIES INC.

发明人： Ryan W. Sporer ,  Jiehui Shu

IPC分类号： H01L21/762 ,  H01L21/74 ,  H01L21/768 ,  H01L29/06

摘要： A method forms a trench isolation opening extending into an SOI substrate, and forms an etch stop member in a portion of the insulator layer abutting a side of the trench isolation opening. The etch stop member has a higher etch selectivity than the insulator layer of the SOI substrate. A trench isolation is formed in the trench isolation opening. A contact is formed to a portion of the semiconductor layer of the SOI substrate. The etch stop member is structured to prevent contact punch through to the base substrate of the SOI substrate.

公开(公告)号：US09634143B1

公开(公告)日：2017-04-25

申请号：US15215921

申请日：2016-07-21

申请人： GLOBALFOUNDRIES Inc.

发明人： Jeremy A. Wahl ,  Ryan W. Sporer

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L21/84 ,  H01L29/417

CPC分类号： H01L29/7848 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L21/823892 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/0928 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791

摘要： One disclosed method includes forming a fin in a substrate by etching a plurality of fin-formation trenches, forming a layer of insulating material in the trenches, performing a densification anneal process on the layer of insulating material and, after performing the densification anneal process, performing at least one ion implantation process to form a counter-doped well region in the fin. The method also includes forming an undoped semiconductor material on an exposed upper surface of the fin, recessing the insulating material so as to expose at least a portion of the undoped semiconductor material and forming a gate structure around the exposed portion of the undoped semiconductor material.