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公开(公告)号：US11664296B2
公开(公告)日：2023-05-30
申请号：US17183389
申请日：2021-02-24
IPC分类号： H01L23/473 , H01L23/40
CPC分类号： H01L23/473 , H01L23/4006 , H01L2023/4043 , H01L2023/4087
摘要： Provided is a semiconductor module including semiconductor devices and a cooling apparatus, wherein the semiconductor device has semiconductor chips and a circuit board with the semiconductor chips implemented thereon; the cooling apparatus has a top plate, a side wall, a bottom plate, a coolant flow portion, an inlet, an outlet and a plurality of fins; the top plate and the bottom plate have three through holes that are through holes for inserting fastening members that fasten the semiconductor module to an external apparatus, penetrating the top plate and the bottom plate in one direction respectively; and a geometric center of gravity of a aperture of at least one of the inlet and the outlet may also be positioned inside a virtual triangle with the three through holes being vertexes in planar view.
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公开(公告)号：US11581252B2
公开(公告)日：2023-02-14
申请号：US17188221
申请日：2021-03-01
IPC分类号： H01L25/07 , H01L23/498 , H01L23/538 , H01L23/00 , H01L25/18
摘要： A semiconductor module includes at least two semiconductor elements connected in parallel; a control circuit board placed between the at least two semiconductor elements; a control terminal for external connection; a first wiring member that connects the control terminal and the control circuit board; and a second wiring member that connects a control electrode of one of the at least two semiconductor elements and the control circuit board, wherein the second wiring member is wire-bonded from the control electrode towards the control circuit board, and has a first end on the control electrode and a second end on the control circuit board, the first end having a cut end face facing upward normal to a surface of the control electrode and the second end having a cut end face facing sideways parallel to a surface of the control circuit board.
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公开(公告)号：US11444004B2
公开(公告)日：2022-09-13
申请号：US16806490
申请日：2020-03-02
IPC分类号： H01L23/34 , H01L23/473 , H05K7/20 , F28F3/02 , H01L23/373 , H01L23/40
摘要： A cooler of the present invention is provided with a case having a top plate, a bottom plate, and a side plate, cooling fins disposed inside the case, and a flow path for cooling fluid that comes into contact with the cooling fins and that flows through the interior of the case, the cooler cooling an object to be cooled in contact with the top plate or the bottom plate. The cooling fins have a shaft part and vane parts that protrude outward from the shaft part and extend spirally in the axial direction; the overall cooling fin configuration constituting a quadrangular column shape. The cooling fins are disposed in contact with at least the top plate and the bottom plate, and the flow path has a spiral-formed configuration formed by the vane parts, the top plate, and the bottom plate.
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公开(公告)号：US20190088575A1
公开(公告)日：2019-03-21
申请号：US16120754
申请日：2018-09-04
发明人： Ryoichi Kato , Kohei Yamauchi , Hiromichi Gohara , Tatsuhiko Asai
IPC分类号： H01L23/495 , H01L23/492 , H01L23/367 , H01L23/00 , H01L29/739
摘要： A semiconductor module includes a semiconductor element having one and the other surface, a lead terminal connected electrically and thermally to the semiconductor element, a first solder which bonds the lead terminal and the one surface of the semiconductor element together, a circuit layer over which the semiconductor element is disposed and a second solder which bonds the other surface of the semiconductor element and the circuit layer together. The inequality (A/B)
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公开(公告)号：US09978664B2
公开(公告)日：2018-05-22
申请号：US15473638
申请日：2017-03-30
发明人： Takafumi Yamada , Hiromichi Gohara
IPC分类号： H01L23/46 , H01L23/498 , H01L23/31 , H01L23/00
CPC分类号： H01L23/46 , H01L23/3121 , H01L23/3735 , H01L23/473 , H01L23/49833 , H01L23/49838 , H01L24/32 , H01L25/07 , H01L25/18 , H01L2224/32225 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091
摘要： To bond a layered substrate and a cooling chamber having different linear expansion coefficients while preventing cracking and breaking, provided is a semiconductor module including a layered substrate formed by layering a circuit board, an insulating board, and a metal board; a semiconductor chip mounted on the circuit board; and a cooling chamber bonded to the metal board by solder. The cooling chamber includes a first board portion bonded to the metal board; a second board portion facing the first board portion; and a plurality of zigzag fins arranged between the first board portion and the second board portion. The plurality of zigzag fins are joined to the first board portion and the second board portion, and a flow path through which a coolant passes is formed by the first board portion, the second board portion, and the plurality of zigzag fins.
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公开(公告)号：US09960100B2
公开(公告)日：2018-05-01
申请号：US15027419
申请日：2015-03-18
发明人： Nobuhide Arai , Hiromichi Gohara
IPC分类号： H01L23/34 , H01L23/36 , H01L23/46 , H01L23/467 , H01L23/473 , H01L23/433 , H01L25/07 , H01L25/18 , H01L23/427 , H01L23/367
CPC分类号： H01L23/473 , H01L23/34 , H01L23/36 , H01L23/367 , H01L23/427 , H01L23/433 , H01L23/46 , H01L23/467 , H01L25/07 , H01L25/072 , H01L25/18 , H01L2924/0002 , H01L2924/00
摘要： A cooler includes: a jacket having an internal coolant conduction space surrounded by a main cooling surface top plate, an opposite bottom plate, and a side wall; coolant inflow and outflow pipes connected to two through holes in the side wall; a coolant introduction channel forming a part of the coolant conduction space and communicating with the coolant inflow pipe; a coolant discharge channel forming a part of the coolant conduction space and communicating with the coolant outflow pipe; and a fin unit between the coolant introduction and discharge channels. The fin unit includes a plurality of fins having separate main surfaces and thermally connected to the top plate. The fins have first ends acutely angled relative to a direction of flow of coolant in the coolant introduction channel, and second ends acutely angled relative to a direction of flow of coolant in the coolant discharge channel.
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公开(公告)号：US20140376184A1
公开(公告)日：2014-12-25
申请号：US14374419
申请日：2013-04-11
发明人： Hiromichi Gohara
IPC分类号： H01L23/467 , H01L23/36 , H01L23/473 , F28F3/00 , F28F9/00
CPC分类号： H01L23/467 , F28F3/00 , F28F9/00 , H01L23/36 , H01L23/3735 , H01L23/473 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/072 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H05K7/20254 , H05K7/20927 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device exhibits low pressure loss and is capable of cooling a plurality of power semiconductor chips evenly. This semiconductor device includes a semiconductor module and a cooler for cooling a power semiconductor element mounted in the semiconductor module. A cooling unit of the cooler has a first header part that has a first bottom surface disposed between a coolant inlet and an end portion of a first substrate on the coolant outlet side and inclined toward a bottom plane of cooling fins so that a coolant supplied from the coolant inlet flows toward the cooling fins; and a second header part that has a second bottom surface inclined from an end portion of the bottom plane of the cooling fins on the coolant outlet side so that the coolant discharged from the cooling fins flows to the coolant outlet.
摘要翻译： 半导体器件表现出低的压力损失并且能够均匀地冷却多个功率半导体芯片。 该半导体器件包括用于冷却安装在半导体模块中的功率半导体元件的半导体模块和冷却器。 冷却器的冷却单元具有第一集管部分，第一集管部分具有设置在冷却剂入口和冷却剂出口侧的第一基板的端部之间的第一底表面，并且朝向冷却翅片的底平面倾斜，使得从 冷却剂入口流向散热片; 以及第二集管部分，其具有从冷却剂出口侧的冷却翅片的底面的端部倾斜的第二底表面，使得从冷却片散出的冷却剂流到冷却剂出口。
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公开(公告)号：US12127382B2
公开(公告)日：2024-10-22
申请号：US17679867
申请日：2022-02-24
IPC分类号： H05K7/20 , H01L23/367 , H01L23/473 , H01L25/07 , H01L25/18
CPC分类号： H05K7/20927 , H01L23/3677 , H01L23/473 , H05K7/20254 , H01L25/072 , H01L25/18
摘要： A semiconductor module includes a cooling device that includes: a ceiling plate; a side wall; a bottom plate; a plurality of pin fins having a polygonal shape and arranged in a matrix form in which one end of the respective pin fins is connected to a fin region having a rectangular shape; an inlet for a coolant at a first position adjacent to a part of one of long sides of the fin region, and an outlet for the coolant at a second position adjacent to a part of the other long side of the fin region. The matrix directions of the respective pin fins make an angle with a straight line connecting the first position and the second position, and a length of a segment of the straight line passing across the fin region is longer than a length of short sides of the fin region.
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公开(公告)号：US11201121B2
公开(公告)日：2021-12-14
申请号：US15903570
申请日：2018-02-23
IPC分类号： H01L23/00 , H01L23/31 , H01L23/367 , H01L23/46 , H01L23/29 , H01L23/373 , H01L23/433 , H01L23/473 , H01L23/498
摘要： A semiconductor device encompasses a cooler made of ceramics, having a first main face and a second main face, being parallel and opposite to the first main face, defined by two opposite side faces perpendicular to the first and second main faces, a plurality of conductive-pattern layers delineated on the first main face, a semiconductor chip mounted on the first main face via one of the plurality of conductive-pattern layers, and a seal member configured to seal the semiconductor chip.
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公开(公告)号：US10332845B2
公开(公告)日：2019-06-25
申请号：US15826669
申请日：2017-11-29
IPC分类号： H01L23/00 , H01L23/31 , H01L23/367 , H01L23/373 , H01L23/58 , H01L23/50 , H01L25/07 , H01L25/18 , H01L23/24 , H01L23/36
摘要： A semiconductor device includes: an upper-surface electrode on an upper surface of a semiconductor element; a plated layer on an upper surface of the upper-surface electrode; gate runners penetrating the plated layer and formed to extend above the upper surface of the semiconductor element; and a metal connecting plate arranged above the plated layer and electrically connected to the upper-surface electrode, wherein the metal connecting plate has a joint portion parallel to the upper surface of the semiconductor element and has a rising portion at an end of the joint portion, the rising portion extending in a direction away from the semiconductor element, and in a plane parallel to the upper surface of the semiconductor element, a first distance, which is a shortest distance between the rising portion and the gate runner not intersecting the rising portion, is equal to or longer than 1 mm.
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