知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

12 records (took 0.017 seconds)

    Through substrate via with diffused conductive component
    1.
    发明授权
    Through substrate via with diffused conductive component 有权
    通过具有扩散导电部件的基板通孔

    公开(公告)号：US09318376B1

    公开(公告)日：2016-04-19

    申请号：US14570029

    申请日：2014-12-15

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Paige M Holm ,  Lianjun Liu ,  Ruben B. Montez

    IPC: H01L21/44 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

    CPC classification number: H01L23/481 ,  B81C1/00095 ,  H01L21/76898

    Abstract: A front-end-of-line through-substrate via is provided for application in certain semiconductor device fabrication, including microelectromechanical (MEMS) devices. The through-substrate via (TSV) has a conductive element formed from the cylindrical core of a ring-shaped isolating etch trench. The conductivity of the core is provided by in-diffusion of dopants from a highly-doped layer deposited along sidewalls of the core within the etched trench. The highly-doped layer used as the diffusion source can be either conductive or insulating, depending upon the application. The highly-doped diffusion source layer can be retained after diffusion to further contribute to the conductivity of the TSV, to help fill or seal the via, or can be partially or completely removed. Embodiments provide for the drive in-diffusion process to use a same heating step as that used for thermal oxidation to fill or seal the via trench. Other embodiments can provide for diffusion elements from a gaseous source.

    Abstract translation: 提供了一种前端通孔基板通孔，用于某些半导体器件制造中，包括微机电（MEMS）器件。 贯穿衬底通孔（TSV）具有由环形隔离蚀刻沟槽的圆柱形芯形成的导电元件。 芯的电导率通​​过在蚀刻沟槽内沿着芯的侧壁沉积的高掺杂层的掺杂剂的扩散而提供。 用作扩散源的高掺杂层可以是导电的或绝缘的，这取决于应用。 高掺杂扩散源层可以在扩散后保留，以进一步有助于TSV的导电性，有助于填充或密封通孔，或者可以部分或完全去除。 实施例提供了驱动扩散过程中使用与用于热氧化的填充或密封通孔沟槽相同的加热步骤。 其它实施例可以提供来自气态源的扩散元件。

    ETCH RELEASE RESIDUE REMOVAL USING ANHYDROUS SOLUTION
    2.
    发明申请
    ETCH RELEASE RESIDUE REMOVAL USING ANHYDROUS SOLUTION 有权
    使用非离子解决方案去除蚀刻残留物

    公开(公告)号：US20150368099A1

    公开(公告)日：2015-12-24

    申请号：US14307877

    申请日：2014-06-18

    Applicant: Freescale Semiconductor, Inc.

    Inventor： Srivatsa G. Kundalgurki ,  Ruben B. Montez ,  Gary Pfeffer

    IPC: B81C1/00

    CPC classification number: B81C1/00849 ,  B81C1/00134 ,  B81C1/0092 ,  B81C1/00952 ,  B81C2201/0109 ,  B81C2201/0132

    Abstract: A method of making a microelectromechanical systems (MEMS) device includes etching away a sacrificial material layer to release a mechanical element of the MEMS device. The MEMS device is formed at least partially on the sacrificial material layer, and the etching leaves a residue in proximity to the mechanical element. The residue is exposed to an anhydrous solution to remove the residue. The residue may be an ammonium fluorosilicate-based residue, and the anhydrous solution may include acetic acid, isopropyl alcohol, acetone, or any anhydrous solution that can effectively dissolve the ammonium fluorosilicate-based residue.

    Abstract translation: 制造微机电系统（MEMS）器件的方法包括蚀刻掉牺牲材料层以释放MEMS器件的机械元件。 MEMS器件至少部分地形成在牺牲材料层上，蚀刻在机械元件附近留下残留物。 将残余物暴露于无水溶液中以除去残余物。 残渣可以是氟硅酸铵系残渣，无水溶液可以含有乙酸，异丙醇，丙酮或能够有效溶解氟硅酸铵残渣的任意无水溶液。

    Systems and methods for anchoring components in MEMS semiconductor devices
    3.
    发明授权
    Systems and methods for anchoring components in MEMS semiconductor devices 有权
    用于在MEMS半导体器件中锚固组件的系统和方法

    公开(公告)号：US09458010B1

    公开(公告)日：2016-10-04

    申请号：US14805924

    申请日：2015-07-22

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Ruben B. Montez ,  Robert F. Steimle

    IPC: H01L21/36 ,  B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00039 ,  B81B2203/0307 ,  B81C2201/0197

    Abstract: A method of making a semiconductor device forms anchors for one or more layers of material. The method includes depositing a first layer of material on a substrate, applying a mask over the first layer of material to mask nanoparticle-sized areas of the first material, removing portions of the first layer of material to form a first set of recesses around the nanoparticle-sized areas of the first material, depositing a second layer of material in the recesses and over the nanoparticle-sized areas so that a second set of recesses is formed in a top surface of the second layer of material, and forming a component of the semiconductor device over the second layer of material. Material of a bottom surface of the component is included in the second set of recesses.

    Abstract translation: 制造半导体器件的方法形成用于一层或多层材料的锚固件。 该方法包括在衬底上沉积第一层材料，在第一材料层上施加掩模以掩盖第一材料的纳米颗粒尺寸的区域，去除第一材料层的部分以形成围绕第一材料的第一组凹陷 所述第一材料的纳米颗粒尺寸的区域，在所述凹部中并在所述纳米颗粒尺寸区域上沉积第二层材料，使得在所述第二材料层的顶表面中形成第二组凹陷，并形成所述第二层材料的组分 半导体器件在第二层材料上。 部件的底面的材料被包括在第二组凹部中。

    REDUCING MEMS STICTION BY DEPOSITION OF NANOCLUSTERS
    4.
    发明申请
    REDUCING MEMS STICTION BY DEPOSITION OF NANOCLUSTERS 有权
    通过沉积纳米微粒的方法减少MEMS

    公开(公告)号：US20160167944A1

    公开(公告)日：2016-06-16

    申请号：US15051264

    申请日：2016-02-23

    Applicant: Freescale Semiconductor, Inc.

    Inventor： Robert F. Steimle ,  Ruben B. Montez

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的机构。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米团簇形成。 当MEMS器件的下一部分形成在牺牲层上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙的表面减小了可用于MEMS器件中的接触的表面积，并且进而降低了可赋予粘性的面积。

    Reducing MEMS stiction by increasing surface roughness
    6.
    发明授权
    Reducing MEMS stiction by increasing surface roughness 有权
    通过增加表面粗糙度来减少MEMS粘结

    公开(公告)号：US09550664B2

    公开(公告)日：2017-01-24

    申请号：US14574784

    申请日：2014-12-18

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Ruben B. Montez ,  Robert F. Steimle

    IPC: H01L29/84 ,  B81B3/00

    CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81C2201/115

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积（例如行驶停止和行驶停止区域）来减小MEMS装置中的静摩擦的机构。 通过增加行驶停止区域的表面粗糙度来实现接触表面积的减小。 这是通过使用气态盐酸作为反应物之一在电介质层上沉积多晶硅层来实现的。 执行随后的回蚀以进一步增加粗糙度。 多晶硅的沉积和随后的回蚀可以重复一次或多次，以获得所需的粗糙度。 然后可以沉积最终的多晶硅层以达到期望的厚度。 对该最终多晶硅层进行图案化以形成行驶停止区域。 较粗糙的表面减小了可用于接触的表面积，并且进而降低了可赋予粘性的面积。

    REDUCING MEMS STICTION BY INCREASING SURFACE ROUGHNESS
    10.
    发明申请
    REDUCING MEMS STICTION BY INCREASING SURFACE ROUGHNESS 有权
    通过增加表面粗糙度来减少MEMS的影响

    公开(公告)号：US20160176707A1

    公开(公告)日：2016-06-23

    申请号：US14574784

    申请日：2014-12-18

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Ruben B. Montez ,  Robert F. Steimle

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81C2201/115

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积（例如行驶停止和行驶停止区域）来减小MEMS装置中的静摩擦的机构。 通过增加行驶停止区域的表面粗糙度来实现接触表面积的减小。 这是通过使用气态盐酸作为反应物之一在电介质层上沉积多晶硅层来实现的。 执行随后的回蚀以进一步增加粗糙度。 多晶硅的沉积和随后的回蚀可以重复一次或多次，以获得所需的粗糙度。 然后可以沉积最终的多晶硅层以达到期望的厚度。 对该最终多晶硅层进行图案化以形成行驶停止区域。 较粗糙的表面减小了可用于接触的表面积，并且进而降低了可赋予粘性的面积。

Patent Agency Ranking