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公开(公告)号：US20230295537A1
公开(公告)日：2023-09-21
申请号：US18117175
申请日：2023-03-03
申请人： ENTEGRIS, INC.
发明人： Jun Liu , Chao-Yu Wang , Daniela White , Michael L. White
CPC分类号： C11D7/3218 , C11D11/0047 , C11D7/34 , C11D7/3272 , C11D7/5022 , H01L21/02074
摘要： The invention provides compositions useful in post-CMP cleaning operations, particularly those substrates which contain exposed copper surfaces. The compositions of the invention provide excellent cleaning of such substrates while showing fewer defects from silica and organic materials present at the surface of the substrate. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in two or more containers, the components of the compositions.
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公开(公告)号：US20230159866A1
公开(公告)日：2023-05-25
申请号：US17991251
申请日：2022-11-21
申请人： ENTEGRIS, INC.
发明人： Atanu K. Das , Daniela White , Michael L. White , Jun Liu , Aditya Dilip Verma
IPC分类号： C11D11/00 , C11D1/72 , C11D3/43 , C11D3/30 , C11D3/04 , C11D3/37 , C11D3/34 , C11D3/39 , C11D3/36 , C11D3/22 , H01L21/02
CPC分类号： C11D11/0047 , C11D1/721 , C11D3/43 , C11D3/30 , C11D3/044 , C11D3/3776 , C11D3/3454 , C11D3/3942 , C11D3/042 , C11D3/361 , C11D3/225 , H01L21/02057
摘要： Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.
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公开(公告)号：US20220336210A1
公开(公告)日：2022-10-20
申请号：US17720580
申请日：2022-04-14
申请人： ENTEGRIS, INC.
发明人： Jun Liu , Michael L. White , Daniela White , Emanuel I. Cooper
IPC分类号： H01L21/02
摘要： Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.
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公开(公告)号：US20230030323A1
公开(公告)日：2023-02-02
申请号：US17949956
申请日：2022-09-21
申请人： ENTEGRIS, INC.
发明人： Atanu K. Das , Daniela White , Emanuel I. Cooper , Eric Hong , JeongYeol Yang , Juhee Yeo , Michael L. White , SeongJin Hong , SeungHyun Chae , Steven A. Lippy , WonLae Kim
IPC分类号： C23F1/38 , H01L21/3213
摘要： An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.
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公开(公告)号：US11492709B2
公开(公告)日：2022-11-08
申请号：US17230633
申请日：2021-04-14
申请人： ENTEGRIS, INC.
发明人： Atanu K. Das , Daniela White , Emanuel I. Cooper , Eric Hong , JeongYeol Yang , Juhee Yeo , Michael L. White , SeongJin Hong , SeungHyun Chae , Steven A. Lippy , WonLae Kim
IPC分类号： C23F1/38 , H01L21/3213
摘要： An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.
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公开(公告)号：US11905491B2
公开(公告)日：2024-02-20
申请号：US17492257
申请日：2021-10-01
申请人： Entegris, Inc.
发明人： Daniela White , YoungMin Kim , Michael L. White
CPC分类号： C11D11/0047 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D7/5022 , H01L21/02065
摘要： In general, the invention provides high pH cleaning compositions for dielectric surfaces such as PETEOS, SiO2, thermal oxide, silicon nitride, silicon, etc. The compositions of the invention afford superior surface wetting, dispersion of particles and organic residues, and prevents redeposition and re-agglomeration of the dispersed residue during cleaning to afford superior cleaning and low defectivity.
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公开(公告)号：US20230323248A1
公开(公告)日：2023-10-12
申请号：US18124355
申请日：2023-03-21
申请人： ENTEGRIS, INC.
发明人： Volley Wang , Atanu K. Das , Michael L. White , Chun-I Lee , Nilesh Gunda , Daniela White , Donald Frye
CPC分类号： C11D3/0042 , C11D1/66 , C11D3/245 , C11D3/30 , C11D3/43 , C11D11/0047 , C11D17/0008
摘要： The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C6-C12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.
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公开(公告)号：US20230399754A1
公开(公告)日：2023-12-14
申请号：US18207569
申请日：2023-06-08
申请人： ENTEGRIS, INC.
CPC分类号： C23G1/18 , B81C1/00857 , B81C2201/0142 , B81C2201/0133
摘要： The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.
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