公开(公告)号：US20230399754A1

公开(公告)日：2023-12-14

申请号：US18207569

申请日：2023-06-08

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Michael L. White ,  YoungMin Kim ,  Akshay Rajopadhye ,  Atanu K. Das

IPC: C23G1/18 ,  B81C1/00

CPC classification number: C23G1/18 ,  B81C1/00857 ,  B81C2201/0142 ,  B81C2201/0133

Abstract: The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

公开(公告)号：US11365351B2

公开(公告)日：2022-06-21

申请号：US17066152

申请日：2020-10-08

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel I. Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US11905491B2

公开(公告)日：2024-02-20

申请号：US17492257

申请日：2021-10-01

Applicant: Entegris, Inc.

Inventor： Daniela White ,  YoungMin Kim ,  Michael L. White

IPC: C11D3/30 ,  C11D11/00 ,  C11D7/32 ,  C11D7/26 ,  H01L21/02 ,  C11D7/34 ,  C11D7/50

CPC classification number: C11D11/0047 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5022 ,  H01L21/02065

Abstract: In general, the invention provides high pH cleaning compositions for dielectric surfaces such as PETEOS, SiO2, thermal oxide, silicon nitride, silicon, etc. The compositions of the invention afford superior surface wetting, dispersion of particles and organic residues, and prevents redeposition and re-agglomeration of the dispersed residue during cleaning to afford superior cleaning and low defectivity.

公开(公告)号：US20220275276A1

公开(公告)日：2022-09-01

申请号：US17747731

申请日：2022-05-18

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel I. Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US11781066B2

公开(公告)日：2023-10-10

申请号：US17747731

申请日：2022-05-18

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

CPC classification number: C09K13/06 ,  H01J37/32724 ,  H01J37/32917 ,  H01L21/31111

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.