公开(公告)号：US10351809B2

公开(公告)日：2019-07-16

申请号：US15540293

申请日：2016-01-05

Applicant: ENTEGRIS, INC.

Inventor： Elizabeth Thomas ,  Donald Frye ,  Jun Liu ,  Michael White ,  Danela White ,  Chao-Yu Wang

IPC: C11D3/30 ,  C11D11/00 ,  H01L21/02 ,  B08B3/08 ,  C11D3/20 ,  C11D3/26 ,  C11D3/34 ,  C11D7/32 ,  C11D1/62 ,  H01L21/321 ,  H01L21/768

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US20230295537A1

公开(公告)日：2023-09-21

申请号：US18117175

申请日：2023-03-03

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Chao-Yu Wang ,  Daniela White ,  Michael L. White

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  C11D7/50 ,  H01L21/02

CPC classification number: C11D7/3218 ,  C11D11/0047 ,  C11D7/34 ,  C11D7/3272 ,  C11D7/5022 ,  H01L21/02074

Abstract: The invention provides compositions useful in post-CMP cleaning operations, particularly those substrates which contain exposed copper surfaces. The compositions of the invention provide excellent cleaning of such substrates while showing fewer defects from silica and organic materials present at the surface of the substrate. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in two or more containers, the components of the compositions.

公开(公告)号：US11149235B2

公开(公告)日：2021-10-19

申请号：US16515935

申请日：2019-07-18

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Elizabeth Thomas ,  Jun Liu ,  Michael White ,  Chao-Yu Wang ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02 ,  C11D7/34

Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.