Abstract:
An antenna structure includes a dielectric lens, an antenna substrate on the dielectric lens, and antenna electrodes on the antenna substrate. Each of the antenna electrodes may include a wire electrode and an empty plane having a triangular shape defined by the wire electrode. The antenna structure can reduce periodic reflection of a high frequency signal, suppress a periodic gain reduction phenomenon, and provide flat gain characteristics in a wide frequency band.
Abstract:
Provided is a broadband photomixer technology that is a core to generate continuous frequency variable and pulsed terahertz waves. It is possible to enhance light absorptance by applying the transmittance characteristic of a 2D light crystal structure and it is possible to increase the generation efficiency of terahertz waves accordingly. Moreover, it is possible to implement a wide area array type terahertz photomixer by applying an interdigit structure and spatially properly arranging a light crystal structure having various cycles. Accordingly, it is possible to solve difficulty in thermal characteristic and light alignment by mitigating the high light density of a light absorption unit and low photoelectric conversion efficiency is drastically improved. In addition, the radiation pattern of terahertz waves may be electrically controlled through the present invention.
Abstract:
Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.
Abstract:
Disclosed is a terahertz wave generating apparatus. The terahertz wave generating apparatus includes a dual mode laser including a first single mode laser that generates a first beating signal, a gain adjustment region that modulates the first beating signal, and a second single mode laser that generates a second beating signal, and a photomixer that mixes the modulated first beating signal and the second beating signal, and that modulates a current supplied based on a beating frequency of the mixed beating signals to generate a terahertz wave signal, and the gain adjustment region is formed between the first single mode laser and the second single mode laser, and the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.
Abstract:
Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.
Abstract:
Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.
Abstract:
A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.
Abstract:
An image acquisition apparatus including a beam source, a beam expander, a beam splitter, an interferometer reference arm, a sample, a beam diffuser, a telecentric f-θ lens, a beam scanner, and a beam detector uses a terahertz wave to acquire a surface image and a depth image of the sample.
Abstract:
Provided herein is terahertz continuous wave emitting device having: a plurality of laser light sources generating a plurality of laser lights; and an absorption area formed between the plurality of laser light sources in order to adjust interaction of the plurality of laser lights, wherein the absorption area is configured to have a photo diode, an antenna integrated into the photo diode.
Abstract:
A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.