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公开(公告)号：US12191632B2
公开(公告)日：2025-01-07
申请号：US17183680
申请日：2021-02-24
Inventor： Hyun Soo Kim , Kyung Hyun Park , Eui Su Lee , Il Min Lee , Kiwon Moon , Dong Woo Park , Jun-Hwan Shin
Abstract: Disclosed is a terahertz wave generating apparatus. The terahertz wave generating apparatus includes a dual mode laser including a first single mode laser that generates a first beating signal, a gain adjustment region that modulates the first beating signal, and a second single mode laser that generates a second beating signal, and a photomixer that mixes the modulated first beating signal and the second beating signal, and that modulates a current supplied based on a beating frequency of the mixed beating signals to generate a terahertz wave signal, and the gain adjustment region is formed between the first single mode laser and the second single mode laser, and the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.
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2.发明授权Wide area array type photonic crystal photomixer for generating and detecting broadband terahertz wave 有权用于产生和检测宽带太赫兹波的广域阵列型光子晶体光混色器公开(公告)号：US09136421B2
公开(公告)日：2015-09-15
申请号：US14154717
申请日：2014-01-14
Inventor： Kiwon Moon , Han-Cheol Ryu , Sang-Pil Han , Kyung Hyun Park
IPC: H01L31/12 , H01L31/0232 , H01L31/0304 , H01L31/18 , H04B10/90 , B82Y20/00 , H01L25/16 , G01N21/3581 , G01N21/3586 , G02F1/01
CPC classification number: H01L31/12 , B82Y20/00 , G01N21/3581 , G01N21/3586 , G02F1/0126 , G02F2202/12 , G02F2202/32 , G02F2203/13 , H01L25/167 , H01L31/02327 , H01L31/03046 , H01L31/18 , H01L2924/0002 , H04B10/90 , H01L2924/00
Abstract: Provided is a broadband photomixer technology that is a core to generate continuous frequency variable and pulsed terahertz waves. It is possible to enhance light absorptance by applying the transmittance characteristic of a 2D light crystal structure and it is possible to increase the generation efficiency of terahertz waves accordingly. Moreover, it is possible to implement a wide area array type terahertz photomixer by applying an interdigit structure and spatially properly arranging a light crystal structure having various cycles. Accordingly, it is possible to solve difficulty in thermal characteristic and light alignment by mitigating the high light density of a light absorption unit and low photoelectric conversion efficiency is drastically improved. In addition, the radiation pattern of terahertz waves may be electrically controlled through the present invention.
Abstract translation: 提供了一种宽带光混频器技术，其是产生连续频率可变和脉冲太赫兹波的核心。 可以通过应用2D光晶体结构的透射特性来增强光吸收，并且可以相应地提高太赫兹波的产生效率。 此外，可以通过应用叉指结构并在空间上适当地布置具有各种周期的光晶体结构来实现广域阵列型太赫兹光混频器。 因此，可以通过减轻光吸收单元的高光密度来解决热特性和光取向的困难，并且显着提高了低的光电转换效率。 此外，太赫兹波的辐射图可以通过本发明进行电控制。
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3.发明授权Apparatus for generating/detecting terahertz wave using graphene and manufacturing method of the same 有权使用石墨烯生成/检测太赫兹波的装置及其制造方法公开(公告)号：US09130082B2
公开(公告)日：2015-09-08
申请号：US14063361
申请日：2013-10-25
Inventor： Kyung Hyun Park , Sang-Pil Han , Jeong Woo Park , Han-Cheol Ryu , Kiwon Moon , Namje Kim , Hyunsung Ko
IPC: H01Q13/08 , H01L31/028 , H01L31/08
CPC classification number: H01L31/028 , H01L31/085
Abstract: Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.
Abstract translation: 提供一种太赫兹波发生/检测装置及其制造方法。 太赫兹波发生/检测装置包括： 具有有源区和发射区的衬底; 在所述有源区域和所述基板的透射区域上沿第一方向延伸的下金属层; 设置在有源区上的下金属层上的石墨烯层; 以及在有源区域的石墨烯层和透射区域中的衬底在第一方向上延伸的上金属层，其中通过在石墨烯层和石墨烯层之间的边界表面上诱导的表面等离子体激元产生或放大太赫兹波 通过施加到石墨烯层和金属层上的激光的下部金属层。
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Patent Agency Ranking
公开(公告)号：US11876143B2
公开(公告)日：2024-01-16
申请号：US17513805
申请日：2021-10-28
Inventor： Kiwon Moon , Kyung Hyun Park , Dong Woo Park , Jun-Hwan Shin , Eui Su Lee , Hyun Soo Kim , Il Min Lee
IPC: H01L31/102 , H01L29/88 , H01L31/0304 , G02F2/02 , H03B7/08
CPC classification number: H01L31/102 , G02F2/02 , H01L29/882 , H01L31/03048 , H03B7/08 , G02F2203/13
Abstract: Provided is a terahertz light source device including an antenna, a plurality of wire electrodes configured to connect the antenna to a power source, a capacitor connected to the wire electrodes between the antenna and the power source, and a plurality of resonance tunneling diodes connected to the wire electrodes between the capacitor and the antenna, and configured to generate a terahertz wave by coupling with the capacitor as a parallel resonance circuit with respect to the power source.
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5.发明授权公开(公告)号：US09035251B2
公开(公告)日：2015-05-19
申请号：US14049059
申请日：2013-10-08
Inventor： Sang-Pil Han , Kyung Hyun Park , Namje Kim , Han-Cheol Ryu , Jeong Woo Park , Hyunsung Ko , Kiwon Moon
IPC: G01J5/20 , G01N21/3581
CPC classification number: G01N21/3581
Abstract: A terahertz wave generating module includes a bidirectional light source which provides a first dual-mode beam in a first direction and a second dual-mode beam in a second direction; a forward lens unit which focuses the first dual-mode beam; a photomixer unit which converts the first dual-mode beam focused by the forward lens unit into a terahertz wave; a backward lens unit which focuses the second dual-mode beam; and a light output unit which uses the second dual-mode beam focused by the backward lens unit as a light signal, wherein the bidirectional light source, the forward lens unit, the photomixer unit, the backward lens unit, and the light output unit are integrated in a housing.
Abstract translation: 太赫兹波发生模块包括双向光源，其在第一方向上提供第一双模光束，而在第二方向上提供第二双模光束; 聚焦第一双模光束的前透镜单元; 将由前向透镜单元聚焦的第一双模光束转换为太赫兹波的光混合器单元; 聚焦第二双模光束的反向透镜单元; 以及使用由后向透镜单元聚焦的第二双模光束作为光信号的光输出单元，其中双向光源，前透镜单元，光混合器单元，后透镜单元和光输出单元是 融入住房。
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公开(公告)号：US20240201524A1
公开(公告)日：2024-06-20
申请号：US18540415
申请日：2023-12-14
Applicant: Electronics and Telecommunications Research Institute , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kiwon Moon , Jung Jin Ju , Hyeon Hwang , Min-Kyo Seo , Hansuek Lee
CPC classification number: G02F1/035 , G02F1/0316 , G02F1/0322 , G02F2203/15
Abstract: Provided is an optical integrated circuit device. The device includes a substrate, a buffer layer provided on the substrate, an optical waveguide layer provided on the buffer layer and including a signal waveguide and a resonant waveguide adjacent to an input terminal and output terminal of the signal waveguide, and a plurality of signal electrodes provided on one side of the resonant waveguide and on the optical waveguide layer of both sides of the signal waveguide.
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公开(公告)号：US11269178B2
公开(公告)日：2022-03-08
申请号：US16668574
申请日：2019-10-30
Inventor： Eui Su Lee , Kyung Hyun Park , Il Min Lee , Kiwon Moon , Dong Woo Park , Hyun Soo Kim , Ho Jin Lee , Jeong Woo Park , Jun Hwan Shin , Kyeong Sun Choi , Dahye Choi
Abstract: Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.
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公开(公告)号：US11201250B2
公开(公告)日：2021-12-14
申请号：US16848826
申请日：2020-04-14
Inventor： Dong Woo Park , Kyung Hyun Park , Jeong Woo Park , Jun Hwan Shin , Eui Su Lee , Hyun Soo Kim , Kiwon Moon , Il Min Lee
IPC: H01L29/872 , H01L29/205 , H01L29/47 , H01L29/66 , H01L21/285 , H01L21/306
Abstract: A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.
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