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公开(公告)号：US20190074392A1
公开(公告)日：2019-03-07
申请号：US16122634
申请日：2018-09-05
Inventor： Hyun-Tak KIM , Jin Cheol CHO , Tetiana SLUSAR
IPC: H01L31/032 , H01L27/144 , H01L31/18
Abstract: Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×1015 cm−3 and lower than 1.0×1019 cm−3, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.
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公开(公告)号：US20220115535A1
公开(公告)日：2022-04-14
申请号：US17499736
申请日：2021-10-12
Inventor： Tae Moon ROH , Hyun-Tak KIM , Sun Ae KIM
Abstract: Provided is a monolithic metal-insulator transition device. The monolithic metal-insulator transition device includes a substrate including a driving region and a switching region, first and second source/drain regions on the driving region, a gate electrode between the first and second source/drain regions, an inlet well region formed adjacent to an upper surface of the substrate on the switching region, a control well region having a different conductivity type from the inlet well region between the inlet well region and a lower surface of the substrate, a first wiring electrically connecting the first source/drain region and the control well region, and a second wiring electrically connecting the second source/drain region and the inlet well region.
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3.发明申请公开(公告)号：US20200182913A1
公开(公告)日：2020-06-11
申请号：US16709216
申请日：2019-12-10
Inventor： Hyun-Tak KIM , Bit Na KIM , Sungwoo JO
Abstract: The present invention relates to a current sensor which measures alternating electromagnetic wave and a current breaker using the same, and the current sensor for alternating current is characterized in that it includes a sensor part arranged at a separation distance from the power wire through which alternating current is flowing; and a means of detecting alternating current by measuring the electromagnetic wave generated across the above sensor part by the electromotive force induced by the alternating current flowing through the above power wire, and in that the above means of detecting alternating current includes an amplifier.
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4.发明公开公开(公告)号：US20240235176A1
公开(公告)日：2024-07-11
申请号：US18563243
申请日：2022-11-08
Inventor： Hyun-Tak KIM , Tae Moon ROH
IPC: H02H3/08
CPC classification number: H02H3/08
Abstract: Disclosed is a discontinuous jump current breaker, in an AC power system having an insulating material that exhibits nonlinear electrical characteristics between two electrodes, which blocks an AC power by observing a discontinuous jump current in which an insulator-metal transition occurs. The discontinuous jump current breaker includes a setting unit that sets the magnitude of a discontinuous jump current, a sensor unit including a metallic wire (Republic of Korea Patent Registration No. 10-1981640) parallel to an AC power wire, located at a separation distance d≥0, and that measures electromagnetic waves of an AC power, an amplifier unit that amplifies an analog signal of the metal wire, an analog-to-digital converter that converts the amplified analog signal to digital, a microcontroller unit including a memory unit for storing a program that drives the system, and a power blocking unit that blocks the discontinuous jump current.
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Patent Agency Ranking
公开(公告)号：US20150008974A1
公开(公告)日：2015-01-08
申请号：US14322223
申请日：2014-07-02
Inventor： Hyun-Tak KIM
IPC: H03K17/30 , H03K17/567
CPC classification number: H03K17/30 , H03K17/567 , H03K17/60 , H03K17/601 , H03K2217/0009
Abstract: Provided is a metal-insulator transition (MIT) transistor system including an MIT critical current supply device allowing MIT to occur between a control terminal and an outlet terminal of an MIT transistor for easily and conveniently driving the MIT transistor. A current supplier according to the present invention provides a critical current for allowing an MIT phenomenon to occur between the control terminal and the output terminal of the MIT transistor.
Abstract translation: 提供了一种包括MIT临界电流供应装置的金属 - 绝缘体转变（MIT）晶体管系统，其允许在控制端子和MIT晶体管的出口端子之间发生MIT，以便于和方便地驱动MIT晶体管。 根据本发明的当前供应商提供了用于允许在MIT晶体管的控制端子和输出端子之间发生MIT现象的临界电流。
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6.发明申请公开(公告)号：US20130292753A1
公开(公告)日：2013-11-07
申请号：US13929831
申请日：2013-06-28
Inventor： Hyun-Tak KIM , Bongjun KIM
IPC: H01L27/06
CPC classification number: H01L27/0629 , H01L25/16 , H01L27/0248 , H01L49/003 , H01L2924/0002 , H03K17/145 , H01L2924/00
Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.
Abstract translation: 提供了一种可变场效应晶体管（FET），其设计成在降低FET的温度的同时抑制源极和漏极之间的电流的降低，以及包括可变栅极FET的电气和电子设备。 可变栅极FET包括FET和栅极控制装置，其连接到FET的表面或发热部分，并且连接到FET的栅极端子，以便改变栅极端子的电压。 源极和漏极之间的沟道电流由栅极控制器控制，栅极控制器件当FET的温度升高到高于预定温度时改变栅极端子的电压。
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公开(公告)号：US20170249818A1
公开(公告)日：2017-08-31
申请号：US15592830
申请日：2017-05-11
Inventor： Hyun-Tak KIM , Bongjun KIM , Jong Chan PARK
CPC classification number: G08B17/06 , H01C1/02 , H01C7/047 , H01H37/32 , H01L27/0248 , H01L27/0647 , H01L49/003 , H02H9/045
Abstract: The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.
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8.发明申请ELECTRICAL SWITCHGEAR FOR OVERCURRENT PROTECTION USING CRITICAL TEMPERATURE DEVICE 审中-公开使用关键温度装置进行过电流保护的电气开关公开(公告)号：US20160233040A1
公开(公告)日：2016-08-11
申请号：US15001804
申请日：2016-01-20
Inventor： Hyun-Tak KIM , Sungwoo JO , Sun-Kyu JUNG , Jin-cheol CHO
Abstract: The present disclosure discloses an electrical switchgear configured to control an electro-magnet by using the electro-magnet, a critical temperature device, and an electro-magnet control unit without using a bimetal and a mechanical contact. The electro-magnet switches power applied through a power line in response to a flow of control current to a power device connected to a load side. In a critical temperature device, an output current value varies when a temperature of a heating wire, which is connected to the power line, exceeds a critical temperature by supply current flowing to the power device. An electro-magnet control unit, which is realizable with an SCR, allows a flow of control current of the electro-magnet to be generated or cut off in response to the output current value of the critical temperature device.
Abstract translation: 本公开公开了一种电开关装置，其被配置为通过使用电磁体，临界温度装置和电磁体控制单元来控制电磁体，而不使用双金属和机械接触。 电磁铁响应于连接到负载侧的电力设备的控制电流的流动来切换通过电力线施加的电力。 在临界温度装置中，当连接到电力线的发热丝的温度通过流向电力装置的电流流过临界温度时，输出电流值变化。 可用SCR实现的电磁体控制单元允许响应于临界温度装置的输出电流值而产生或切断电磁体的控制电流。
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公开(公告)号：US20140007914A1
公开(公告)日：2014-01-09
申请号：US13905950
申请日：2013-05-30
Inventor： Hyun-Tak KIM , Jeong Yong CHOI , Hyun-Woo JEON , Jae ho CHOI , Gi-wan SEO
IPC: H01L35/12
Abstract: Provided is a thermoelectric device including a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film may be configured to exhibit a metallic property at a temperature over a critical temperature, thereby having a thermoelectric power of the device that is higher than that of a semiconductor junction.
Abstract translation: 提供了一种热电装置，其包括第一电极，与第一电极电连接的基板，基板上的薄膜和薄膜上的第二电极。 衬底和薄膜可以被配置为在超过临界温度的温度下表现出金属性质，由此具有比半导体结的高的热电功率。
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