公开(公告)号：US20140007914A1

公开(公告)日：2014-01-09

申请号：US13905950

申请日：2013-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak KIM ,  Jeong Yong CHOI ,  Hyun-Woo JEON ,  Jae ho CHOI ,  Gi-wan SEO

IPC: H01L35/12

CPC classification number: H01L35/12 ,  H01L35/20 ,  H01L35/22

Abstract: Provided is a thermoelectric device including a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film may be configured to exhibit a metallic property at a temperature over a critical temperature, thereby having a thermoelectric power of the device that is higher than that of a semiconductor junction.

Abstract translation: 提供了一种热电装置，其包括第一电极，与第一电极电连接的基板，基板上的薄膜和薄膜上的第二电极。 衬底和薄膜可以被配置为在超过临界温度的温度下表现出金属性质，由此具有比半导体结的高的热电功率。