摘要:
A mine roof support system includes an elongated anchor rod or tendon having a rigid non-deformable distalmost anchoring end portion, and one or more axially deformable portions which are configured to deform in the event load forces exceed a threshold force approximating the forces during a rock burst or rock dilation event. The rigid anchoring portion is provided with primary anchor members such as ribs, grooves, studs and the like. The primary anchor members are configured to reduce bar plasticity, and fixedly secure and retain the rigid portion in place in a drill hole. In the event rock forces exceed the threshold force, the plastically deformable portions elongate with the dilating rock to accommodate and absorb the rock forces.
摘要:
A mine roof support assembly for anchoring in a bore hole by means of a resin, cementitious grout which includes an elongated reinforcing tendon which extends from a proximal end portion to a distal end portion. A slip sheath formed from a heat shrunk plastic, is secured by heat shrinkage radially about the tendon. The sheath is mechanically coupled to the tendon so as to allow the desired axial sliding of the tendon relative to the sheath on the application of predetermined forces which sufficient to effect any desired yielding movement of the tendon in the bore hole. An anti-bonding agent or coating and/or anticorrosive may be interposed between the sheath and the tendon, whereby the sheath substantially encapsulates and limits the admixing of the interposed anti-bonding agent/anti-corrosive coating with the resin.
摘要:
A mine roof support system includes an elongated anchor rod or tendon having a rigid non-deformable distalmost anchoring end portion, and one or more axially deformable portions which are configured to deform in the event load forces exceed a threshold force approximating the forces during a rock burst or rock dilation event. The rigid anchoring portion is provided with primary anchor members such as ribs, gooves, studs and the like. The primary anchor members are configured to reduce bar plasticity, and fixedly secure and retain the rigid portion in place in a drill hole. In the event rock forces exceed the threshold force, the plastically deformable portions elongate with the dilating rock to accommodate and absorb the rock forces.
摘要:
A mine roof support assembly for anchoring in a bore hole by means of a resin, cementitious grout which includes an elongated reinforcing tendon which extends from a proximal end portion to a distal end portion. A slip sheath formed from a heat shrunk plastic, is secured by heat shrinkage radially about the tendon. The sheath is mechanically coupled to the tendon so as to allow the desired axial sliding of the tendon relative to the sheath on the application of predetermined forces which sufficient to effect any desired yielding movement of the tendon in the bore hole. An anti-bonding agent or coating and/or anticorrosive may be interposed between the sheath and the tendon, whereby the sheath substantially encapsulates and limits the admixing of the interposed anti-bonding agent/anti-corrosive coating with the resin.
摘要:
The embodiments of the invention disclose an object determining method, a portable device, an object displaying method, an object switching method and an electronic device. Said method is applied to a touch sensitive portable device. Identifications of multiple objects are displayed within a display area of said portable device. Each of the identifications of said multiple objects has a first status of being selected and a second status of being unselected. Said display area has a first area, the identification of a first object is displayed in the first area, and the first object is in the first status. Said method comprises: obtaining a switch instruction; moving the identification of the first object of the first area, switching the identification of the first object from the first status to the second status, moving the identification of the second object into the first area, and switching the identification of the second object from the second status to the first status according to the switch instruction. The embodiments of the invention can simplify the steps of the user's operation.
摘要:
A structure includes a substrate; a transistor disposed over the substrate, the transistor comprising a fin comprised of Silicon that is implanted with Carbon; and a gate dielectric layer and gate metal layer overlying a portion of the fin that defines a channel of the transistor. In the structure a concentration of Carbon within the fin is selected to establish a desired voltage threshold of the transistor. Methods to fabricate a FinFET transistor are also disclosed. Also disclosed is a planar transistor having a Carbon-implanted well where the concentration of the Carbon within the well is selected to establish a desired voltage threshold of the transistor.
摘要:
Multigate transistor devices and methods of their fabrication are disclosed. In accordance with one method, a fin and a gate structure that is disposed on a plurality of surfaces of the fin are formed. In addition, at least a portion of an extension of the fin is removed to form a recessed portion that is below the gate structure, is below a channel region of the fin, and includes at least one angled indentation. Further, a terminal extension is grown in the at least one angled indentation below the channel region and along a surface of the channel region such that the terminal extension provides a stress on the channel region to enhance charge carrier mobility in the channel region.
摘要:
A gate stack structure for a transistor device includes a gate dielectric layer formed over a substrate; a first silicon gate layer formed over the gate dielectric layer; a dopant-rich monolayer formed over the first silicon gate layer; and a second silicon gate layer formed over the dopant-rich monolayer, wherein the dopant-rich monolayer prevents silicidation of the first silicon gate layer during silicidation of the second silicon gate layer.
摘要:
Methods for imparting a dual stress property in a stress liner layer of a semiconductor device. The methods include depositing a metal layer over a compressive stress liner layer, applying a masking agent to a portion of the metal layer to produce a masked and unmasked region of the metal layer, etching the unmasked region of the metal layer to remove the metal layer in the unmasked region to thereby expose a corresponding portion of the compressive stress liner layer, removing the mask to expose the metal layer from the masked region, and irradiating the compressive stress liner layer to impart a tensile stress property to the exposed portion of the compressive stress liner layer. Methods are also provided for imparting a compressive-neutral dual stress property in a stress liner layer, as well as for imparting a neutral-tensile dual stress property in a stress liner layer.
摘要:
A touch-input device and an electronic device and a cell phone are described and include a touch acquisition module with an input area to execute touch acquisition operations. The input area includes a first area and a second area. A pointing object location module is used to determine the start location of the touch operation according to the data acquired by the touch acquisition module. A process module is used to calculate a first result indicating the coordinate of the pointing object according to the data acquired by the touch acquisition module when the start location of the touch operation is in the first area, and to calculate a second result indicating the movement of the pointing object according to the data acquired by the touch acquisition module when the start location of the touch operation is in the second area.