公开(公告)号：US09763944B2

公开(公告)日：2017-09-19

申请号：US15297372

申请日：2016-10-19

Applicant: Yanfeng Wang ,  Elisabeth Wehrle

Inventor： Yanfeng Wang ,  Elisabeth Wehrle

IPC: A01N43/00 ,  A61K31/33 ,  A61K31/506 ,  G01N33/574

CPC classification number: A61K31/506 ,  G01N33/57446

Abstract: The invention relates to a method of treating proliferative diseases mediated by the tyrosine kinase receptor KIT, in particular GIST, in a human patient population.

公开(公告)号：US20170035757A1

公开(公告)日：2017-02-09

申请号：US15297372

申请日：2016-10-19

Applicant: Yanfeng Wang ,  Elisabeth Wehrle

Inventor： Yanfeng Wang ,  Elisabeth Wehrle

IPC: A61K31/506

CPC classification number: A61K31/506 ,  G01N33/57446

Abstract: The invention relates to a method of treating proliferative diseases mediated by the tyrosine kinase receptor KIT, in particular GIST, in a human patient population.

Abstract translation: 本发明涉及在人类患者群体中治疗由酪氨酸激酶受体KIT（特别是GIST）介导的增殖性疾病的方法。

公开(公告)号：US20170007605A1

公开(公告)日：2017-01-12

申请号：US15272576

申请日：2016-09-22

Applicant: Insa Gathmann ,  Francois-Xavier Mahon ,  Mathieu Molimard ,  Stephane Picard ,  Yanfeng Wang

Inventor： Insa Gathmann ,  Francois-Xavier Mahon ,  Mathieu Molimard ,  Stephane Picard ,  Yanfeng Wang

IPC: A61K31/506 ,  G01N33/49

CPC classification number: A61K31/506 ,  A61K31/00 ,  G01N33/49 ,  G01N2800/52

Abstract: The present invention provides a method of treating Philadelphia positive (Ph+) leukemia, such as Philadelphia chromosome positive acute lymphoblastic leukemia (Ph+ ALL) or chronic myeloid leukemia (CML), in a human patient population comprising the steps of (a) administering a predetermined fixed therapeutically effective amount of an Bcr-Abl tyrosine kinase inhibitor, such as Imatinib, or a pharmaceutically acceptable salt thereof to human patients suffering from a Ph+ leukemia, (b) collecting at least one blood sample from said patients, (c) determining the plasma trough level (Cmin) of the Bcr-Abl tyrosine kinase inhibitor or of a metabolite thereof as well as the MMR rates, (d) assessing a discrimination potential of trough plasma concentrations for MMR and identifying a Cmin threshold for optimal sensitivity and specificity and (e) adjusting the dose of the inhibitor of the Bcr-Abl tyrosine kinase or a pharmaceutically acceptable salt thereof applied to the individual patients from said patient population and, optionally, future patients suffering from a Ph+ leukemia in a manner that a Cmin is achieved in each single patient equal to or higher than the Cmin threshold obtained under step (d).

Abstract translation: 本发明提供了一种在人类患者群体中治疗费城阳性（Ph +）白血病如费城染色体阳性急性淋巴细胞白血病（Ph + ALL）或慢性骨髓性白血病（CML）的方法，包括以下步骤：（a） 将固定量的Bcr-Abl酪氨酸激酶抑制剂（例如伊马替尼）或其药学上可接受的盐给予患有Ph +白血病的人类患者，（b）从所述患者收集至少一种血液样品，（c）测定血浆槽 Bcr-Abl酪氨酸激酶抑制剂或其代谢物的水平（Cmin）以及MMR率，（d）评估MMR的谷浆浓度的鉴别潜力，并鉴定最佳灵敏度和特异性的Cmin阈值，（e ）调节从所述患者群体应用于个体患者的Bcr-Abl酪氨酸激酶抑制剂或其药学上可接受的盐的剂量 以及任选地，患有Ph +白血病的未来患者以等于或高于步骤（d）获得的Cmin阈值的每个单个患者中实现Cmin的方式。

公开(公告)号：US09483986B2

公开(公告)日：2016-11-01

申请号：US12421956

申请日：2009-04-10

Applicant: Yanfeng Wang

Inventor： Yanfeng Wang

IPC: G09G3/36

CPC classification number: G09G3/3611 ,  G09G2320/0252 ,  G09G2320/041 ,  G09G2340/16

Abstract: The present invention relates to a method for compensating response time of liquid crystal display and a device therefor. The compensating method comprises: receiving gray scale data of a picture in present frame and obtaining a first additional driving value according to the comparison result between gray scale data of the picture in present frame and gray scale data of the picture in previous frame; collecting the temperature value of liquid crystal layer and obtaining a temperature driving value according to said temperature value; and generating a second driving value that is applied to pixels according to the first additional driving value and the temperature driving value. The compensating device comprises: a first additional driving value module for obtaining a first additional driving value; a temperature driving value module for collecting the temperature value of liquid crystal layer and obtaining a temperature driving value according to said temperature value; and a second additional driving value module for generating a second additional driving value. The present invention can effectively reduce the response time of liquid crystal display and mitigate the streaking problem.

Abstract translation: 本发明涉及一种用于补偿液晶显示器的响应时间的方法及其装置。 补偿方法包括：根据当前帧中的图像的灰度数据和前一帧中的图像的灰度数据之间的比较结果，接收当前帧中的图像的灰度数据并获得第一附加驱动值; 收集液晶层的温度值，并根据所述温度值获得温度驱动值; 以及根据第一附加驱动值和温度驱动值产生应用于像素的第二驱动值。 补偿装置包括：用于获得第一附加驱动值的第一附加驱动值模块; 温度驱动值模块，用于收集液晶层的温度值，并根据所述温度值获得温度驱动值; 以及用于产生第二附加驱动值的第二附加驱动值模块。 本发明可以有效地减少液晶显示的响应时间并减轻条纹问题。

公开(公告)号：US08730061B2

公开(公告)日：2014-05-20

申请号：US12981526

申请日：2010-12-30

Applicant: Yanfeng Wang ,  Dawei Guo ,  Jiazhou Liu

Inventor： Yanfeng Wang ,  Dawei Guo ,  Jiazhou Liu

IPC: G08G1/00 ,  G08G1/01 ,  G07B15/02 ,  H04B1/40 ,  H04B7/00

CPC classification number: G07B15/063

Abstract: A method comprises: disposing an on-board unit at a preset relative position with respect to a road-side unit; transmitting a signal by the road-side unit; receiving the signal by the on-board unit and detecting a strength of the received signal; calculating, by the on-board unit, a calculated strength of the received signal according to the detected strength of the received signal; storing the calculated strength of the received signal in a memory accessible by the on-board unit; using the stored calculated strength of the received signal to determine if payment of a toll should be made.

Abstract translation: 一种方法包括：将车载单元布置在相对于路侧单元的预设相对位置处; 通过路侧单元发送信号; 通过机载单元接收信号并检测接收信号的强度; 根据检测到的接收信号的强度，由车载单元计算接收信号的计算强度; 将计算出的接收信号的强度存储在由板上单元访问的存储器中; 使用存储的所计算的接收信号的强度来确定是否应该支付费用。

公开(公告)号：US08492852B2

公开(公告)日：2013-07-23

申请号：US12792242

申请日：2010-06-02

Applicant: Tze-Chiang Chen ,  Dechao Guo ,  Philip J. Oldiges ,  Yanfeng Wang

Inventor： Tze-Chiang Chen ,  Dechao Guo ,  Philip J. Oldiges ,  Yanfeng Wang

IPC: H01L21/02 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L29/517 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/513 ,  H01L29/518

Abstract: A gate stack structure for field effect transistor (FET) devices includes a nitrogen rich first dielectric layer formed over a semiconductor substrate surface; a nitrogen deficient, oxygen rich second dielectric layer formed on the nitrogen rich first dielectric layer, the first and second dielectric layers forming, in combination, a bi-layer interfacial layer; a high-k dielectric layer formed over the bi-layer interfacial layer; a metal gate conductor layer formed over the high-k dielectric layer; and a work function adjusting dopant species diffused within the high-k dielectric layer and within the nitrogen deficient, oxygen rich second dielectric layer, and wherein the nitrogen rich first dielectric layer serves to separate the work function adjusting dopant species from the semiconductor substrate surface.

Abstract translation: 用于场效应晶体管（FET）器件的栅极堆叠结构包括形成在半导体衬底表面上的富氮第一介电层; 形成在富氮第一介电层上的缺氮富氧的第二电介质层，第一和第二电介质层组合形成双层界面层; 形成在双层界面层上的高k电介质层; 形成在高k电介质层上的金属栅极导体层; 以及调节掺杂物质的功函数，其在所述高k电介质层内和所述缺氮富氧的第二电介质层内扩散，并且其中所述富氮第一介电层用于将所述功函数调节掺杂剂物质与所述半导体衬底表面分离。

公开(公告)号：US20130105894A1

公开(公告)日：2013-05-02

申请号：US13282619

申请日：2011-10-27

Applicant: MaryJane Brodsky ,  Ming Cai ,  Dechao Guo ,  William K. Henson ,  Shreesh Narasimha ,  Yue Liang ,  Liyang Song ,  Yanfeng Wang ,  Chun-Chen Yeh

Inventor： MaryJane Brodsky ,  Ming Cai ,  Dechao Guo ,  William K. Henson ,  Shreesh Narasimha ,  Yue Liang ,  Liyang Song ,  Yanfeng Wang ,  Chun-Chen Yeh

IPC: H01L27/12 ,  H01L21/04

CPC classification number: H01L29/66803

Abstract: A structure includes a substrate; a transistor disposed over the substrate, the transistor comprising a fin comprised of Silicon that is implanted with Carbon; and a gate dielectric layer and gate metal layer overlying a portion of the fin that defines a channel of the transistor. In the structure a concentration of Carbon within the fin is selected to establish a desired voltage threshold of the transistor. Methods to fabricate a FinFET transistor are also disclosed. Also disclosed is a planar transistor having a Carbon-implanted well where the concentration of the Carbon within the well is selected to establish a desired voltage threshold of the transistor.

Abstract translation: 一种结构包括基板; 设置在所述衬底上的晶体管，所述晶体管包括由碳注入的由硅构成的鳍; 以及覆盖限定晶体管的沟道的鳍片的一部分上的栅极电介质层和栅极金属层。 在该结构中，选择鳍内的碳浓度以建立晶体管的期望电压阈值。 还公开了制造FinFET晶体管的方法。 还公开了具有碳注入阱的平面晶体管，其中选择阱内的碳浓度以建立晶体管的期望电压阈值。

公开(公告)号：US08173531B2

公开(公告)日：2012-05-08

申请号：US12535183

申请日：2009-08-04

Applicant: Sunfei Fang ,  Brian J. Greene ,  Effendi Leobandung ,  Qingqing Liang ,  Edward P. Maciejewski ,  Yanfeng Wang

Inventor： Sunfei Fang ,  Brian J. Greene ,  Effendi Leobandung ,  Qingqing Liang ,  Edward P. Maciejewski ,  Yanfeng Wang

IPC: H01L21/8238 ,  H01L21/336

CPC classification number: H01L21/823857 ,  H01L21/28247 ,  H01L21/823842 ,  H01L21/823864 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/66636

Abstract: A method of forming threshold voltage controlled semiconductor structures is provided in which a conformal nitride-containing liner is formed on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-containing liner is a thin layer that is formed using a low temperature (less than 500° C.) nitridation process.

Abstract translation: 提供了形成阈值电压控制的半导体结构的方法，其中在至少暴露的具有大于氧化硅的介电常数的栅极介电材料的侧壁上形成共形氮化物衬里。 含氮氮化物的内衬是使用低温（小于500℃）的氮化工艺形成的薄层。

公开(公告)号：US20120043622A1

公开(公告)日：2012-02-23

申请号：US12858094

申请日：2010-08-17

Applicant: Eduard A. CARTIER ,  Qingqing LIANG ,  Yue LIANG ,  Yanfeng WANG

Inventor： Eduard A. CARTIER ,  Qingqing LIANG ,  Yue LIANG ,  Yanfeng WANG

IPC: H01L29/68 ,  G06F9/45 ,  H01L21/336

CPC classification number: H01L29/408 ,  G06F17/5045 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

Abstract: Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k dielectric metal gate structure includes applying a current to a gate contact of the high-k dielectric metal gate structure to raise a temperature of a metal forming a gate stack. The temperature is raised beyond a Vt shift temperature threshold for providing an on-state.

Abstract translation: 使用高k电介质金属栅Vt移位效应提供可编程场效应晶体管（FET）及其制造方法。 控制高k电介质金属栅极结构中的Vt漂移的方法包括向高k电介质金属栅极结构的栅极接触施加电流以升高形成栅极叠层的金属的温度。 温度升高超过Vt转换温度阈值以提供导通状态。

公开(公告)号：US20110224224A1

公开(公告)日：2011-09-15

申请号：US13129903

申请日：2009-11-30

Applicant: Yanfeng Wang ,  Thea Kalebic ,  Timothy Peter Hughes ,  Deborah White

Inventor： Yanfeng Wang ,  Thea Kalebic ,  Timothy Peter Hughes ,  Deborah White

IPC: A61K31/506 ,  A61P35/02

CPC classification number: A61K31/506

Abstract: The present invention relates to a method of treating Philadelphia-positive leukemia (Ph+ leukemia), in a particular chronic myeloid leukemia (CML), in a human patient population. More specifically, the present invention pertains to a method of treating Ph+ leukemia, such as CML or Ph+ ALL, in a human patient suffering from Ph+ leukemia comprising the steps of(a) administering a predetermined fixed amount of Imatinib as a free base or in the form of a pharmaceutically acceptable salt thereof to the human patient,(b) collecting at least one blood sample from the patient, e.g. within the first 12 months of treatment,(c) determining the plasma trough level (Cmin) of Imatinib,(d) determining the OCT-1 Activity in the blood sample, and(e) adjusting the dose of Imatinib applied to the individual patient in a manner that an Imatinib Cmin value is achieved in the patient of at least 800 ng/mL, if in step (c) an Imatinib Cmin value of less than 800 ng/mL is found and in step (d) an OCT-1 Activity is found below 6.0 to 10.0 ng/200,000 cells.

Abstract translation: 本发明涉及在人类患者群体中治疗特定慢性骨髓性白血病（CML）中的费城阳性白血病（Ph +白血病）的方法。 更具体地，本发明涉及在患有Ph +白血病的人类患者中治疗Ph +白血病（例如CML或Ph + ALL）的方法，包括以下步骤：（a）施用预定的固定量的伊马替尼作为游离碱或 其药学上可接受的盐的形式提供给人类患者，（b）从患者收集至少一种血液样品， 在治疗的头12个月内，（c）确定伊马替尼的血浆谷值（Cmin），（d）确定血液样品中的OCT-1活性，和（e）调整施用于个体患者的伊马替尼剂量 如果在步骤（c）中发现伊马替尼Cmin值小于800ng / mL，并且在步骤（d）中OCT-1 活性发现低于6.0至10.0ng / 20万个细胞。