Invention Grant
US08492852B2 Interface structure for channel mobility improvement in high-k metal gate stack
有权
高k金属栅极堆叠中沟道迁移率改善的接口结构
- Patent Title: Interface structure for channel mobility improvement in high-k metal gate stack
- Patent Title (中): 高k金属栅极堆叠中沟道迁移率改善的接口结构
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Application No.: US12792242Application Date: 2010-06-02
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Publication No.: US08492852B2Publication Date: 2013-07-23
- Inventor: Tze-Chiang Chen , Dechao Guo , Philip J. Oldiges , Yanfeng Wang
- Applicant: Tze-Chiang Chen , Dechao Guo , Philip J. Oldiges , Yanfeng Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/31 ; H01L21/469
Abstract:
A gate stack structure for field effect transistor (FET) devices includes a nitrogen rich first dielectric layer formed over a semiconductor substrate surface; a nitrogen deficient, oxygen rich second dielectric layer formed on the nitrogen rich first dielectric layer, the first and second dielectric layers forming, in combination, a bi-layer interfacial layer; a high-k dielectric layer formed over the bi-layer interfacial layer; a metal gate conductor layer formed over the high-k dielectric layer; and a work function adjusting dopant species diffused within the high-k dielectric layer and within the nitrogen deficient, oxygen rich second dielectric layer, and wherein the nitrogen rich first dielectric layer serves to separate the work function adjusting dopant species from the semiconductor substrate surface.
Public/Granted literature
- US20110298060A1 INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K METAL GATE STACK Public/Granted day:2011-12-08
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