Method for making float glass having reduced defect density
    2.
    发明申请
    Method for making float glass having reduced defect density 有权
    制造浮法玻璃的方法具有降低的缺陷密度

    公开(公告)号:US20070037688A1

    公开(公告)日:2007-02-15

    申请号:US11584265

    申请日:2006-10-20

    IPC分类号: C03C3/087 C03C3/078

    摘要: A method for reducing the defect density of glass comprising melting a glass composition comprising from 65-75 wt. % of SiO2; from 10-20 wt. % of Na2O; from 5-15 wt. % of CaO; from 0-5 wt. % of MgO; from 0-5 wt. % of Al2O3; from 0-5 wt. % of K2O; from 0-2 wt. % Fe2O3; and from 0-2% FeO, wherein the glass composition has a total field strength index of greater than or equal to 1.23 is disclosed.

    摘要翻译: 一种用于降低玻璃的缺陷密度的方法,包括熔化含有65-75wt。 %SiO 2% 10-20重量% %Na 2 O; 5-15重量% CaO%; 0-5wt。 %的MgO; 0-5wt。 %的Al 2 O 3 3%; 0-5wt。 K 2 O的%; 0-2重量% %Fe 2 O 3 O 3; 和0-2%的FeO,其中玻璃组合物的总场强指数大于或等于1.23。

    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
    3.
    发明授权
    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass 失效
    真空紫外透射硅氧氟硅光刻玻璃

    公开(公告)号:US06242136B1

    公开(公告)日:2001-06-05

    申请号:US09397573

    申请日:1999-09-16

    IPC分类号: G03F900

    摘要: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    摘要翻译: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

    Group iia metal fluoride single crystals suitable for below 200 nm optical lithography and a method for selecting such crystals
    7.
    发明申请
    Group iia metal fluoride single crystals suitable for below 200 nm optical lithography and a method for selecting such crystals 审中-公开
    适用于低于200nm光刻的第iia族金属氟化物单晶和选择这种晶体的方法

    公开(公告)号:US20050031970A1

    公开(公告)日:2005-02-10

    申请号:US10900757

    申请日:2004-07-27

    IPC分类号: G01N21/33 G03F7/20 G03F9/00

    CPC分类号: G03F7/70958 G01N21/33

    摘要: The invention is directed to a method for determining metal fluoride crystals that are suitable for use in below 200 nm optical lithography by correlation of thermally stimulated current (TSC) measurements to fluence dependent transmission (FDT) measurements; and to metal fluoride crystals suitable for below 200 nm optical lithography, such crystals having a fluent dependent transmission slope that is linearly dependent on the thermally stimulated peak maximum. Crystals suitable for below 200 nm lithography can be determined by using the standard linear relationship between the TSC peak strengths and the FDT slopes without further more FDT measurements.

    摘要翻译: 本发明涉及一种通过将受热刺激电流(TSC)测量与流量相关传输(FDT)测量相关联来确定适合用于低于200nm光刻的金属氟化物晶体的方法; 以及适合于低于200nm光刻的金属氟化物晶体,这种晶体具有与热刺激的峰值最大值线性相关的流动依赖的透射斜率。 可以通过使用TSC峰强度和FDT斜率之间的标准线性关系来确定适合于低于200nm光刻的晶体,而不需要进一步的FDT测量。

    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
    8.
    发明授权
    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass 失效
    真空紫外透射硅氧氟硅光刻玻璃

    公开(公告)号:US06492072B2

    公开(公告)日:2002-12-10

    申请号:US09799987

    申请日:2001-03-06

    IPC分类号: G03F900

    摘要: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    摘要翻译: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。