摘要:
A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.
摘要:
A photoresist layer exposed through first slits of a mask is exposed using first light. The photoresist layer exposed through second slits of the mask is exposed by using second light. The first light passes thorough a transflective shutter to generate the second light.
摘要:
Provided are an exposure apparatus and an exposure method using the same. The exposure apparatus includes: a light source unit configured to emit light; a substrate stage supporting a substrate, the substrate comprising an exposure area and a non-exposure area; and a prism unit disposed between the light source unit and the substrate stage, the prism unit movable so as to transmit the light to the exposure area and to block the light from the non-exposure area.
摘要:
Provided are an exposure apparatus and an exposure method using the same. The exposure apparatus includes: a light source unit configured to emit light; a substrate stage supporting a substrate, the substrate comprising an exposure area and a non-exposure area; and a prism unit disposed between the light source unit and the substrate stage, the prism unit movable so as to transmit the light to the exposure area and to block the light from the non-exposure area.
摘要:
A photoresist layer exposed through first slits of a mask is exposed using first light. The photoresist layer exposed through second slits of the mask is exposed by using second light. The first light passes thorough a transflective shutter to generate the second light.
摘要:
An exposure apparatus includes a light source for providing bursts of photolithographic exposure light, a mask for applying a pattern to the photolithographic exposure light, a variable length blind for blocking parts of an exposure window from receiving the photolithographic exposure light and a blind driver for controllably driving the variable length blind. The blind includes a plurality of movable blocking plates. The blind driver includes a plurality of motors and a motor control unit which are structured to rapidly return one or more of the blocking plates through the exposure window in a time duration between the bursts of photolithographic exposure light so that a return stain is not formed on the substrate. In one embodiment, the substrate is a mother substrate having a plurality of LCD daughter substrates being formed thereon.
摘要:
An exposure apparatus includes a light source for providing bursts of photolithographic exposure light, a mask for applying a pattern to the photolithographic exposure light, a variable length blind for blocking parts of an exposure window from receiving the photolithographic exposure light and a blind driver for controllably driving the variable length blind. The blind includes a plurality of movable blocking plates. The blind driver includes a plurality of motors and a motor control unit which are structured to rapidly return one or more of the blocking plates through the exposure window in a time duration between the bursts of photolithographic exposure light so that a return stain is not formed on the substrate. In one embodiment, the substrate is a mother substrate having a plurality of LCD daughter substrates being formed thereon.
摘要:
An exposure apparatus includes a mask, a substrate which passes through a region disposed below the mask while moving in a first direction, a light source unit disposed above the mask, where the light source irradiates light on the substrate through the mask, and at least one blind disposed below the light source unit, where the blind blocks the light irradiated from the light source unit, where a second direction is perpendicular to the first direction in a same plane as the first direction, the blind is a polyhedron having a width, a length and a thickness and is disposed such that a direction of the length is substantially parallel to the second direction, and the blind is rotatable around a rotation axis substantially parallel to the second direction, and where the width is greater than the thickness.
摘要:
An organic thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode. A gate insulating layer is formed on the gate electrode and a data line is formed on the gate insulating layer, intersecting the gate line, and including a drain electrode. A source electrode is formed on the gate insulating layer and is spaced apart from the drain electrode, enclosed by the drain electrode. A bank insulating layer includes a first opening exposing the drain electrode and the source electrode and a second opening which exposes at least a portion of the source electrode. An organic semiconductor is formed in the first opening and contacts the drain electrode and the source electrode. A pixel electrode contacts the source electrode through the second opening.
摘要:
A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.