公开(公告)号：US09341756B2

公开(公告)日：2016-05-17

申请号：US14026486

申请日：2013-09-13

Applicant: CARL ZEISS SMT GmbH

Inventor： Juergen Mueller ,  Thomas Schicketanz ,  Dirk Heinrich Ehm

IPC: G03B27/54 ,  G03B27/32 ,  G02B5/08 ,  G02B27/00 ,  G03F7/20 ,  G21K1/06 ,  B82Y10/00

CPC classification number: G02B5/0816 ,  B82Y10/00 ,  G02B5/0891 ,  G02B27/0025 ,  G03F7/70166 ,  G03F7/70191 ,  G03F7/70233 ,  G03F7/70308 ,  G03F7/70958 ,  G21K1/062

Abstract: A method for correcting a surface form of a mirror (1) for reflecting radiation in the wavelength range of 5-30 nm, which includes: applying a correction layer (13) having a layer thickness variation (21) for correcting the mirror's surface form, and applying a first group (19) of layers to the correction layer. The first group (19) of layers includes first (9) and second (11) layers arranged alternately one above another, wherein the first layers have a refractive index at the operating wavelength which is greater than the refractive index of the second layers for that radiation.The correction layer (13) is applied by: introducing the mirror into an atmosphere including a reaction gas (15), applying a correction radiation (17) having a location-dependent radiation energy density, such that a correction layer having a location-dependent layer thickness variation (21) grows on the mirror's irradiated surface.

Abstract translation: 一种用于校正反射镜（1）的表面形式的方法，用于反射5-30nm的波长范围内的辐射，其包括：施加具有用于校正反射镜表面形式的层厚度变化（21）的校正层（13） ，以及将第一组（19）层应用于所述校正层。 层的第一组（19）包括彼此交替布置的第一层（9）层和第二层（11）层，其中第一层在工作波长处的折射率大于第二层的折射率，为此， 辐射。 通过以下方式施加校正层（13）：将反射镜引入包括反应气体（15）的气氛中，施加具有位置相关辐射能量密度的校正辐射（17），使得具有位置相关 层厚度变化（21）在镜子的照射表面上生长。

公开(公告)号：US09921483B2

公开(公告)日：2018-03-20

申请号：US14981018

申请日：2015-12-28

Applicant: Carl Zeiss SMT GmbH

Inventor： Oliver Dier ,  Tobias Hackl ,  Franz-Josef Stickel ,  Ulrich Loering ,  Tilmann Assmus ,  Juergen Mueller ,  Vladimir Kamenov ,  Siegfried Rennon

IPC: G03B27/42 ,  G03F7/20 ,  G02B5/08 ,  G21K1/06 ,  H05G2/00 ,  G02B27/00

CPC classification number: G03F7/702 ,  G02B5/0816 ,  G02B5/0891 ,  G02B27/0025 ,  G03F7/70308 ,  G03F7/70316 ,  G03F7/706 ,  G03F7/70975 ,  G21K1/062 ,  H05G2/005

Abstract: A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.