公开(公告)号：US20230216474A1

公开(公告)日：2023-07-06

申请号：US18061758

申请日：2022-12-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Guillaume RODRIGUEZ

IPC: H03H9/02 ,  H03H9/13

CPC classification number: H03H9/02228 ,  H03H9/02039 ,  H03H9/131

Abstract: An electroacoustic device includes, stacked in a direction a silicon-based substrate, a first electrode, a piezoelectric layer with the basis of a perovskite taken from among lithium niobate LiNbO3, lithium tantalum LiTaO3, or an Li(Nb,Ta)O3 alloy, on the first electrode, a second electrode disposed on the piezoelectric layer. Advantageously, the first electrode is made of a nitride-based electrically conductive refractory material, such as TiN, VN, TaN. The invention also relates to a method for producing such a device.

公开(公告)号：US20210257623A1

公开(公告)日：2021-08-19

申请号：US17097730

申请日：2020-11-13

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Guillaume RODRIGUEZ ,  Christophe DUBARRY ,  Aomar HALIMAOUI ,  Magali TESSAIRE

IPC: H01M4/66 ,  H01M10/0585

Abstract: A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSiy. A method for manufacturing the microelectronic device is also provided.

公开(公告)号：US20230179165A1

公开(公告)日：2023-06-08

申请号：US18061774

申请日：2022-12-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Guillaume RODRIGUEZ ,  Laura SAUZE

IPC: H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  C30B29/40 ,  C30B29/30 ,  C30B29/68 ,  C30B23/02 ,  C30B23/06

CPC classification number: H03H3/08 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/25 ,  C30B29/403 ,  C30B29/30 ,  C30B29/68 ,  C30B23/025 ,  C30B23/066

Abstract: A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nucleation layer may be used in a surface acoustic wave device.

公开(公告)号：US20200044138A1

公开(公告)日：2020-02-06

申请号：US16528231

申请日：2019-07-31

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Aomar HALIMAOUI ,  Cécile MOULIN ,  Guillaume RODRIGUEZ

IPC: H01L41/08 ,  H01L41/187 ,  H01L41/319 ,  H01L41/316

Abstract: A piezoelectric device includes at least one upper layer of piezoelectric material based on alkali metal niobate and one lower layer of metal located above a substrate, wherein it comprises a barrier layer of material that is a barrier to the diffusion of alkali metals into the metal and that is inert to the alkali metals of the niobite, the barrier material layer being located between the lower layer of metal and the upper layer of piezoelectric material. A process for producing the device is also provided.

公开(公告)号：US20240188444A1

公开(公告)日：2024-06-06

申请号：US18061839

申请日：2022-12-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Guillaume RODRIGUEZ

IPC: H10N30/072 ,  B32B37/00 ,  B32B37/24 ,  C30B23/02 ,  C30B23/06 ,  C30B29/30 ,  H10N30/853

CPC classification number: H10N30/072 ,  B32B37/025 ,  B32B37/24 ,  C30B23/025 ,  C30B23/066 ,  C30B29/30 ,  H10N30/8542 ,  H10N30/076

Abstract: A method for transferring a layer of interest from a donor substrate to a receiver substrate includes providing the donor substrate made of a transparent material at a wavelength λ, forming at least one sacrificial buffer layer made of an absorbent sacrificial material at the wavelength λ, on the donor substrate, forming the layer of interest on the at least one sacrificial buffer layer, and bonding the layer of interest on the receiver substrate. The at least one sacrificial buffer layer is illuminated by a laser at the wavelength λ through the donor substrate so as to remove the at least one sacrificial buffer layer to separate the layer of interest from the donor substrate.

公开(公告)号：US20180218999A1

公开(公告)日：2018-08-02

申请号：US15747246

申请日：2016-06-29

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Paul GONDCHARTON ,  Lamine BENAISSA ,  Bruno IMBERT ,  Guillaume RODRIGUEZ ,  Chiara SABBIONE

IPC: H01L23/00 ,  B81C3/00

CPC classification number: H01L24/83 ,  B81C3/001 ,  H01L21/02002 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/2007 ,  H01L24/27 ,  H01L2224/2745 ,  H01L2224/80894 ,  H01L2924/0536

Abstract: A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.