公开(公告)号：US20210257623A1

公开(公告)日：2021-08-19

申请号：US17097730

申请日：2020-11-13

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Guillaume RODRIGUEZ ,  Christophe DUBARRY ,  Aomar HALIMAOUI ,  Magali TESSAIRE

IPC: H01M4/66 ,  H01M10/0585

Abstract: A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSiy. A method for manufacturing the microelectronic device is also provided.

公开(公告)号：US20200044138A1

公开(公告)日：2020-02-06

申请号：US16528231

申请日：2019-07-31

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Aomar HALIMAOUI ,  Cécile MOULIN ,  Guillaume RODRIGUEZ

IPC: H01L41/08 ,  H01L41/187 ,  H01L41/319 ,  H01L41/316

Abstract: A piezoelectric device includes at least one upper layer of piezoelectric material based on alkali metal niobate and one lower layer of metal located above a substrate, wherein it comprises a barrier layer of material that is a barrier to the diffusion of alkali metals into the metal and that is inert to the alkali metals of the niobite, the barrier material layer being located between the lower layer of metal and the upper layer of piezoelectric material. A process for producing the device is also provided.