公开(公告)号：US20190153619A1

公开(公告)日：2019-05-23

申请号：US16313774

申请日：2017-06-26

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

Inventor： Benoit AMSTATT ,  Florian DUPONT ,  Ewen HENAFF ,  Berangere HYOT

IPC: C30B29/60 ,  C30B23/02 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18 ,  H01L21/02 ,  H01L33/18 ,  H01L33/00 ,  H01L33/24

Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

公开(公告)号：US20230216474A1

公开(公告)日：2023-07-06

申请号：US18061758

申请日：2022-12-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Guillaume RODRIGUEZ

IPC: H03H9/02 ,  H03H9/13

CPC classification number: H03H9/02228 ,  H03H9/02039 ,  H03H9/131

Abstract: An electroacoustic device includes, stacked in a direction a silicon-based substrate, a first electrode, a piezoelectric layer with the basis of a perovskite taken from among lithium niobate LiNbO3, lithium tantalum LiTaO3, or an Li(Nb,Ta)O3 alloy, on the first electrode, a second electrode disposed on the piezoelectric layer. Advantageously, the first electrode is made of a nitride-based electrically conductive refractory material, such as TiN, VN, TaN. The invention also relates to a method for producing such a device.

公开(公告)号：US20230179165A1

公开(公告)日：2023-06-08

申请号：US18061774

申请日：2022-12-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Guillaume RODRIGUEZ ,  Laura SAUZE

IPC: H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  C30B29/40 ,  C30B29/30 ,  C30B29/68 ,  C30B23/02 ,  C30B23/06

CPC classification number: H03H3/08 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/25 ,  C30B29/403 ,  C30B29/30 ,  C30B29/68 ,  C30B23/025 ,  C30B23/066

Abstract: A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nucleation layer may be used in a surface acoustic wave device.

公开(公告)号：US20240411158A1

公开(公告)日：2024-12-12

申请号：US18731510

申请日：2024-06-03

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Yohan DESIERES

IPC: G02F1/035 ,  H01L21/02

Abstract: A device including, stacked in a vertical direction (z), a silicon-based substrate, a nucleation layer made of a nitride-based refractory material, a lithium niobate-based layer portion, called LNO portion, made of mesa on the nucleation layer, the LNO portion being bordered by a masking layer. The device further includes at least one electrode configured to apply an electric field to the LNO portion. A method for producing such a device, including a formation by localised epitaxy of the LNO portion, is also disclosed.

公开(公告)号：US20240188444A1

公开(公告)日：2024-06-06

申请号：US18061839

申请日：2022-12-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Guillaume RODRIGUEZ

IPC: H10N30/072 ,  B32B37/00 ,  B32B37/24 ,  C30B23/02 ,  C30B23/06 ,  C30B29/30 ,  H10N30/853

CPC classification number: H10N30/072 ,  B32B37/025 ,  B32B37/24 ,  C30B23/025 ,  C30B23/066 ,  C30B29/30 ,  H10N30/8542 ,  H10N30/076

Abstract: A method for transferring a layer of interest from a donor substrate to a receiver substrate includes providing the donor substrate made of a transparent material at a wavelength λ, forming at least one sacrificial buffer layer made of an absorbent sacrificial material at the wavelength λ, on the donor substrate, forming the layer of interest on the at least one sacrificial buffer layer, and bonding the layer of interest on the receiver substrate. The at least one sacrificial buffer layer is illuminated by a laser at the wavelength λ through the donor substrate so as to remove the at least one sacrificial buffer layer to separate the layer of interest from the donor substrate.

公开(公告)号：US20190172970A1

公开(公告)日：2019-06-06

申请号：US16313749

申请日：2017-06-26

Applicant: ALEDIA ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Benoit AMSTATT ,  Vincent BEIX ,  Thomas LACAVE ,  Philippe GILET ,  Ewen HENAFF ,  Berangere HYOT ,  Hubert BONO

IPC: H01L33/00 ,  H01L27/15 ,  H01L27/144 ,  H01L33/24 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/42 ,  H01L31/0224 ,  H01L33/62 ,  H01L31/02 ,  H01L33/46 ,  H01L31/0232 ,  H01L33/32 ,  H01L31/0304

Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.