Abstract:
An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 insulator.sub.2 -metal) memory structure is characterized by the presence of an impurity, such as tungsten, concentrated in a region including the interface ("I.sub.1 I.sub.2 ") between the I.sub.1 and I.sub.2 layers. This metallic impurity provides a well-defined I.sub.1 I.sub.2 interface region, including a potential minimum ("well"), such that the I.sub.1 I.sub.2 interface can be filled with electronic charge carriers (electrons or holes) which have been transported from the semiconductor under the influence of electric fields applied across the structure. The presence versus absence of captured electronic charge carriers at the I.sub.1 I.sub.2 interface can be used as a memory indicator.
Abstract:
In monolithic semiconductor devices of the type wherein storage and manipulation of electronic signals representing information are accomplished by the storage and sequential transfer of packets of excess minority carriers localized in artificially induced potential wells, predictable directionality of chargepacket transfer requires that the potential well be asymmetrical, at least during the transfer operation. The instant invention includes the use of overlapping gate electrodes and/or nonuniform dielectric thicknesses under the gate electrodes of MIS structures so that an appropriately asymmetrical potential well always is formed whenever a voltage is applied to any gate electrode.
Abstract:
The specification describes a single-gun television receiving tube in which color selection is obtained by direct modulation of the phosphor target. Associated with the three-color array of phosphors is an electrode grid which enables all phosphor regions of one color to be exposed simultaneously to an electric field. Via a field quenching mechanism emission from those regions selectively exposed to the field is prevented while the phosphor regions for the color corresponding to the input information emit.
Abstract:
The specification describes a charge coupled device for information storage and processing in the form of discrete charge bundles. The device is characterized in that the storage medium is a semi-insulating material such as ZnO or ZnS. The carriers representing the information can normally be introduced and retrieved through ohmic contacts.
Abstract:
An electronic memory apparatus is disclosed in which the memory element is an insulated gate field effect transistor (IGFET) whose gate contains a metal electrode located on top of two parallel layered insulators, such as silicon oxide and zinc sulfide. The memory of a signal voltage applied to the gate electrode is provided by the phenomenon of tunneling of electrical charges between the metal electrode and the interface between the two insulator layers. These charges are trapped at this interface until a voltage of opposite sign is applied which is sufficient to discharge (''''erase'''' ) the trapped charges at the interface. Nondestructive readout of the presence or absence of these trapped charges is afforded by monitoring the sourcedrain current in the transistor.