公开(公告)号：US3604988A

公开(公告)日：1971-09-14

申请号：US3604988D

申请日：1969-10-03

Applicant: BELL TELEPHONE LABOR INC

Inventor： KAHNG DAWON ,  NICOLLIAN EDWARD H

IPC: G11C16/04 ,  H01L23/29 ,  H01L29/792 ,  H01L11/14

CPC classification number: H01L29/792 ,  G11C16/0466 ,  H01L23/29 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic memory apparatus is disclosed in which the memory element is an insulated gate field effect transistor (IGFET) whose gate contains a metal electrode located on top of two parallel layered insulators, such as silicon oxide and zinc sulfide. The memory of a signal voltage applied to the gate electrode is provided by the phenomenon of tunneling of electrical charges between the metal electrode and the interface between the two insulator layers. These charges are trapped at this interface until a voltage of opposite sign is applied which is sufficient to discharge (''''erase'''' ) the trapped charges at the interface. Nondestructive readout of the presence or absence of these trapped charges is afforded by monitoring the sourcedrain current in the transistor.

公开(公告)号：US3477033A

公开(公告)日：1969-11-04

申请号：US3477033D

申请日：1968-06-17

Applicant: BELL TELEPHONE LABOR INC

Inventor： GOETZBERGER ADOLF ,  NICOLLIAN EDWARD H

IPC: H01L27/00 ,  H01L29/00 ,  H03F3/193 ,  H03F3/68

CPC classification number: H03F3/193 ,  H01L27/00 ,  H01L29/00

公开(公告)号：US3523190A

公开(公告)日：1970-08-04

申请号：US3523190D

申请日：1968-10-17

Applicant: BELL TELEPHONE LABOR INC

Inventor： GOETZBERGER ADOLF ,  NICOLLIAN EDWARD H

IPC: H01L29/00 ,  H01L29/768 ,  H01L31/113 ,  H01J39/12 ,  H01L15/00 ,  H03K3/42

CPC classification number: H01L31/113 ,  H01L29/00 ,  H01L29/768