公开(公告)号：US12139790B2

公开(公告)日：2024-11-12

申请号：US17753524

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Christopher Olsen ,  Rene George ,  Eric Shono ,  Lara Hawrylchak ,  Erika Hansen ,  Tobin Kaufman-Osborn ,  Hansel Lo ,  Kartik Shah

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

公开(公告)号：US20200240014A1

公开(公告)日：2020-07-30

申请号：US16776204

申请日：2020-01-29

Applicant: Applied Materials, Inc

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US11959169B2

公开(公告)日：2024-04-16

申请号：US17958282

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

CPC classification number: C23C16/45517 ,  C23C16/40 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/67017

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20210035781A1

公开(公告)日：2021-02-04

申请号：US16936071

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Vinay Prabhakar ,  Bushra Afzal ,  Badri Ramamurthi ,  Juan C. Rocha

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44

Abstract: A processing chamber may include a gas distribution member, a metal ring member below the gas distribution member, and an isolating assembly coupled with the metal ring member and isolating the metal ring member from the gas distribution member. The isolating assembly may include an outer isolating member coupled with the metal ring member. The outer isolating member may at least in part define a chamber wall. The isolating assembly may further include an inner isolating member coupled with the outer isolating member. The inner isolating member may be disposed radially inward from the metal ring member about an central axis of the processing chamber. The inner isolating member may define a plurality of openings configured to provide fluid access into a radial gap between the metal ring member and the inner isolating member.

公开(公告)号：US20180211826A1

公开(公告)日：2018-07-26

申请号：US15411579

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Wei W. Wang ,  Kartik Shah ,  Vishwas Kumar Pandey

IPC: H01J37/34 ,  C23C14/54

CPC classification number: H01J37/3497 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3417

Abstract: Physical vapor deposition target assemblies and methods of cooling physical vapor deposition targets are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of rows and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US11697875B2

公开(公告)日：2023-07-11

申请号：US16662134

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Agus Sofian Tjandra ,  Tobin Kaufman-Osborn ,  Taewan Kim ,  Hansel Lo

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  B01F23/10 ,  B01F23/19 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F25/421 ,  B01F35/511 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US11529592B2

公开(公告)日：2022-12-20

申请号：US17365791

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Lara Hawrylchak ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Sairaju Tallavarjula ,  Kailash Pradhan ,  Rene George ,  Johanes F. Swenberg ,  Stephen Moffatt

IPC: C23C16/455 ,  B01F23/10 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US11515132B2

公开(公告)日：2022-11-29

申请号：US17316883

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Sanjay Bhat ,  Vibhu Jindal ,  Vishwas Kumar Pandey

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C22C9/04 ,  C22C9/06 ,  B23K15/00 ,  B23K1/20 ,  B23K1/00 ,  B23K1/19 ,  C23C14/54 ,  B23K103/12

Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US11501954B2

公开(公告)日：2022-11-15

申请号：US17324892

申请日：2021-05-19

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Kartik Shah ,  Christopher S. Olsen ,  Agus Sofian Tjandra ,  Hansel Lo ,  Eric Kihara Shono ,  Hemantha Raju

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US11501945B2

公开(公告)日：2022-11-15

申请号：US17102051

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Hansel Lo ,  Agus Sofian Tjandra ,  Taewan Kim ,  Tobin Kaufman-Osborn

IPC: H01J37/04 ,  H01L21/67 ,  H01J37/32 ,  H01J37/20

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.