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    Method and apparatus for calibrating optical path degradation useful for decoupled plasma nitridation chambers
    1.
    发明授权
    Method and apparatus for calibrating optical path degradation useful for decoupled plasma nitridation chambers 有权

    公开(公告)号：US10892147B2

    公开(公告)日：2021-01-12

    申请号：US15865171

    申请日：2018-01-08

    Applicant: Applied Materials, Inc.

    Inventor： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

    IPC: G12B13/00 ,  H01J37/32 ,  G01J3/28 ,  G01J3/443 ,  G01N21/27 ,  G01N21/66

    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

    Remote plasma oxidation chamber
    3.
    发明授权
    Remote plasma oxidation chamber 有权

    公开(公告)号：US11615944B2

    公开(公告)日：2023-03-28

    申请号：US15937076

    申请日：2018-03-27

    Applicant: Applied Materials, Inc.

    Inventor： Christopher S. Olsen ,  Eric Kihara Shono ,  Lara Hawrylchak ,  Agus Sofian Tjandra ,  Chaitanya A. Prasad ,  Sairaju Tallavarjula

    IPC: H01J37/32 ,  C23C16/455 ,  C30B25/14 ,  H01L21/67

    Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.

    Minimal contact edge ring for rapid thermal processing
    4.
    发明授权
    Minimal contact edge ring for rapid thermal processing 有权
    用于快速热处理的最小接触边缘环

    公开(公告)号：US09403251B2

    公开(公告)日：2016-08-02

    申请号：US14042864

    申请日：2013-10-01

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Sairaju Tallavarjula ,  Kevin Joseph Bautista ,  Jeffrey Tobin

    IPC: F26B19/00 ,  A45D20/40 ,  F27D5/00 ,  B23Q3/18 ,  H05B3/00 ,  H01L21/67 ,  H01L21/687

    CPC classification number: B23Q3/18 ,  H01L21/67115 ,  H01L21/6875 ,  H05B3/0038 ,  H05B3/0047

    Abstract: Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.

    Abstract translation: 本文提供了用于半导体衬底处理室的衬底支撑件的边缘环的实施例。 在一些实施例中，用于半导体处理室的边缘环可以包括具有中心开口，内边缘，外边缘，上表面和下表面的环形主体，靠近内边缘设置并向下延伸的内唇缘 以及从所述内唇缘向上延伸并且沿着所述环形体的内边缘设置的多个突起，其中所述多个突起被布置成将衬底支撑在所述内唇缘上方且在所述中心开口上方，其中， 内唇被配置为当衬底设置在多个突起上时，基本上防止光辐射在设置在边缘环上方的第一容积和设置在边缘环下方的第二体积之间行进。

    Gas supply member with baffle
    6.
    发明授权
    Gas supply member with baffle 有权

    公开(公告)号：US11124878B2

    公开(公告)日：2021-09-21

    申请号：US16049239

    申请日：2018-07-30

    Applicant: Applied Materials, Inc.

    Inventor： Kartik Shah ,  Vishwas Kumar Pandey ,  Kailash Pradhan ,  Sairaju Tallavarjula ,  Rene George ,  Eric Kihara Shono ,  Philip A. Bottini ,  Roger Curtis

    IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  C23C14/56

    Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

    Minimal contact edge ring for rapid thermal processing
    9.
    发明授权
    Minimal contact edge ring for rapid thermal processing 有权
    用于快速热处理的最小接触边缘环

    公开(公告)号：US09558982B2

    公开(公告)日：2017-01-31

    申请号：US14030728

    申请日：2013-09-18

    Applicant: Applied Materials, Inc.

    Inventor： Heng Pan ,  Sairaju Tallavarjula ,  Kevin J. Bautista ,  Jeffrey Tobin

    IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

    CPC classification number: H01L21/6835 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68735

    Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.

    Abstract translation: 本公开的实施例一般涉及在处理室中支撑衬底的支撑环。 在一个实施例中，支撑环包括内环，通过平坦部分连接到内环的外周边的外环，从内环的内周径向向内延伸以形成支撑凸缘的边缘，以及 从边缘唇缘的顶表面向上延伸的基底支撑件。 衬底支撑件可以是围绕边缘唇缘的圆周设置的连续环形体。 衬底支撑件从后侧支撑基底围绕其整个周边，具有最小化的接触表面，以使衬底与边缘唇缘热断开。 特别地，基板支撑件提供与基板的背面的实质的线接触。

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