公开(公告)号：US10886122B2

公开(公告)日：2021-01-05

申请号：US15650469

申请日：2017-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Heng Pan ,  Matthew Scott Rogers ,  Christopher S. Olsen

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

公开(公告)号：US10714333B2

公开(公告)日：2020-07-14

申请号：US15183059

申请日：2016-06-15

Applicant: Applied Materials, Inc.

Inventor： Heng Pan ,  Matthew Scott Rogers ,  Agus S. Tjandra ,  Christopher S. Olsen

IPC: H01L21/02

Abstract: Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.

公开(公告)号：US10211046B2

公开(公告)日：2019-02-19

申请号：US14315794

申请日：2014-06-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Heng Pan ,  Lara Hawrylchak ,  Christopher S. Olsen

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.

公开(公告)号：US09768052B2

公开(公告)日：2017-09-19

申请号：US14203163

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Heng Pan ,  Kevin J. Bautista

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C30B25/12

CPC classification number: H01L21/68735 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of the present invention generally relate to a support ring for supporting a substrate during thermal processing in a process chamber. The support ring generally includes a ring body, an outer rib extending from a first surface of the ring body, a midrib extending from the first surface of the ring body, and a substrate support extending from a second surface of the ring body. The support ring reduces thermal coupling between a substrate and the support ring.

公开(公告)号：US09728401B2

公开(公告)日：2017-08-08

申请号：US14206766

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Heng Pan ,  Matthew Scott Rogers ,  Christopher S. Olsen

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

公开(公告)号：US09558982B2

公开(公告)日：2017-01-31

申请号：US14030728

申请日：2013-09-18

Applicant: Applied Materials, Inc.

Inventor： Heng Pan ,  Sairaju Tallavarjula ,  Kevin J. Bautista ,  Jeffrey Tobin

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/6835 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68735

Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.

Abstract translation: 本公开的实施例一般涉及在处理室中支撑衬底的支撑环。 在一个实施例中，支撑环包括内环，通过平坦部分连接到内环的外周边的外环，从内环的内周径向向内延伸以形成支撑凸缘的边缘，以及 从边缘唇缘的顶表面向上延伸的基底支撑件。 衬底支撑件可以是围绕边缘唇缘的圆周设置的连续环形体。 衬底支撑件从后侧支撑基底围绕其整个周边，具有最小化的接触表面，以使衬底与边缘唇缘热断开。 特别地，基板支撑件提供与基板的背面的实质的线接触。

公开(公告)号：US09012336B2

公开(公告)日：2015-04-21

申请号：US13858922

申请日：2013-04-08

Applicant: Applied Materials, Inc.

Inventor： Heng Pan ,  Matthew Scott Rogers ,  Johanes F. Swenberg ,  Christopher S. Olsen ,  Wei Liu ,  David Chu ,  Malcom J. Bevan

IPC: H01L21/469 ,  H01L21/31 ,  H01L21/02

CPC classification number: H01L21/02252 ,  H01L21/02112 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234

Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.

Abstract translation: 公开了用于处理基板的装置和方法。 具有其上具有层的特征的衬底暴露于形成基本上保形层的电感耦合等离子体。

公开(公告)号：US20150020736A1

公开(公告)日：2015-01-22

申请号：US14315794

申请日：2014-06-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Heng Pan ,  Lara Hawrylchak ,  Christopher S. Olsen

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02274 ,  H01L21/67248 ,  H01L21/68735

Abstract: Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.

Abstract translation: 本文提供了在衬底上提供沉积或生长的层的更均匀厚度的衬底支撑环的实施例。 在一些实施例中，衬底支撑环包括：具有中心定位的支撑表面以支撑衬底的内环; 以及从所述支撑表面径向向外延伸的外环，其中所述外环包括设置在所述支撑表面的支撑平面上方并且大致平行于所述支撑表面的支撑平面的反应表面区域，并且其中所述反应表面延伸超过所述支撑表面约24mm至 约45毫米。