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    METHODS OF FORMING ABRUPT INTERFACES BETWEEN SILICON-AND-CARBON-CONTAINING MATERIALS AND SILICON-AND-OXYGEN-CONTAINING MATERIALS
    1.
    发明申请
    METHODS OF FORMING ABRUPT INTERFACES BETWEEN SILICON-AND-CARBON-CONTAINING MATERIALS AND SILICON-AND-OXYGEN-CONTAINING MATERIALS 有权

    公开(公告)号：US20250037987A1

    公开(公告)日：2025-01-30

    申请号：US18226579

    申请日：2023-07-26

    Applicant: Applied Materials, Inc.

    Inventor： Stephen Weeks ,  Hansel Lo ,  John Tolle ,  Christopher S. Olsen ,  Siddarth Krishnan

    IPC: H01L21/02

    Abstract: Exemplary semiconductor processing methods may include performing a pre-treatment on a substrate housed within a processing region of a semiconductor processing chamber. The substrate may include a layer of silicon-and-carbon-containing material. The pre-treatment may remove native oxide or residue from a surface of the layer of silicon-and-carbon-containing material. The methods may include providing a silicon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the silicon-containing precursor. The contacting may deposit a layer of silicon-containing material on the layer of silicon-and-carbon-containing material. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize the layer of silicon-containing material to form a layer of silicon-and-oxygen-containing material.

    Conformal oxidation processes for 3D NAND
    3.
    发明授权
    Conformal oxidation processes for 3D NAND 有权

    公开(公告)号：US11322347B2

    公开(公告)日：2022-05-03

    申请号：US16660646

    申请日：2019-10-22

    Applicant: Applied Materials, Inc.

    Inventor： Johanes F. Swenberg ,  Taewan Kim ,  Christopher S. Olsen ,  Erika Hansen

    IPC: H01L21/02 ,  H01L27/11521 ,  H01L21/28 ,  H01L27/11568

    Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.

    Cleaning method
    5.
    发明授权
    Cleaning method 有权

    公开(公告)号：US10861693B2

    公开(公告)日：2020-12-08

    申请号：US15375683

    申请日：2016-12-12

    Applicant: Applied Materials, Inc.

    Inventor： Peter Stone ,  Christopher S. Olsen ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Zhenwen Ding

    IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/322 ,  H01L21/311

    Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

    Remote radical hydride dopant incorporation for delta doping in silicon
    6.
    发明授权
    Remote radical hydride dopant incorporation for delta doping in silicon 有权
    在硅中用于δ掺杂的远程氢化物掺杂剂掺杂

    公开(公告)号：US08846509B2

    公开(公告)日：2014-09-30

    申请号：US13676703

    申请日：2012-11-14

    Applicant: Applied Materials, Inc.

    Inventor： Christopher S. Olsen ,  Johanes S. Swenberg

    IPC: H01L21/425

    CPC classification number: H01L21/263 ,  H01J37/32357 ,  H01L21/2236

    Abstract: The present invention generally relates to methods of forming substrates using remote radical hydride doping. The methods generally include remotely activating a gas and introducing activated radicals of the gas into a chamber. The activated radicals may be activated hydride radicals of a gas such as diborane (B2H6), phosphine (PH3), or arsine (AsH3) which are utilized to incorporate an element such as boron, phosphorus, or arsenic into a substrate having a surface temperature between about 400 degrees Celsius and about 1000 degrees Celsius. Alternatively, the activated radicals may be activated radicals of an inert gas. The activated radicals of the inert gas are introduced into a chamber having a dopant-containing gas, such as diborane, phosphine, or arsine, therein. The activated radicals of the inert gas activate the dopant-gas and incorporate dopants into a heated substrate located within the chamber.

    Abstract translation: 本发明一般涉及使用远程自由基氢化物掺杂形成衬底的方法。 所述方法通常包括远程激活气体并将气体的活化自由基引入室中。 活化的基团可以是诸如乙硼烷（B 2 H 6），膦（PH 3）或胂（AsH 3）的气体的活化氢化物基团，其用于将诸如硼，磷或砷的元素掺入具有表面温度 介于约400摄氏度和约1000摄氏度之间。 或者，活化的自由基可以是惰性气体的活化基团。 将惰性气体的活化基团引入到其中具有含掺杂剂气体的室中，例如乙硼烷，膦或胂。 惰性气体的活化自由基激活掺杂剂气体，并将掺杂剂掺入到位于室内的加热衬底中。

    Method of linearized film oxidation growth
    7.
    发明授权
    Method of linearized film oxidation growth 有权

    公开(公告)号：US12261039B2

    公开(公告)日：2025-03-25

    申请号：US18185205

    申请日：2023-03-16

    Applicant: Applied Materials, Inc.

    Inventor： Christopher S. Olsen ,  Tobin Kaufman-Osborn

    IPC: H01L21/02 ,  H10B41/50 ,  H10B43/50

    Abstract: Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at a second temperature. A third oxide containing portion is formed over the substrate at a third growth rate by exposing the substrate to a third gas mixture having a third oxygen percentage at a third temperature. The first growth rate is slower than each subsequent growth rate and each growth rate subsequent to the second growth rate is within 50% of each other.

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