公开(公告)号：US20220122823A1

公开(公告)日：2022-04-21

申请号：US17071506

申请日：2020-10-15

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Vinay Prabhakar

IPC: H01J37/32

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

公开(公告)号：US20210320018A1

公开(公告)日：2021-10-14

申请号：US16847955

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Siva Chandrasekar ,  Satish Radhakrishnan ,  Rajath Kumar Lakkenahalli Hiriyannaiah ,  Viren Kalsekar ,  Vinay Prabhakar

IPC: H01L21/67

Abstract: Exemplary substrate processing systems may include chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures through the lid plate and a second plurality of apertures through the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the first plurality of apertures defined through the lid plate. Each lid stack of the plurality of lid stacks may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures.

公开(公告)号：US11600470B2

公开(公告)日：2023-03-07

申请号：US16728552

申请日：2019-12-27

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Satish Radhakrishnan ,  Xiaoquan Min ,  Sarah Michelle Bobek ,  Sungwon Ha ,  Prashant Kumar Kulshreshtha ,  Vinay Prabhakar

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/26 ,  C23C16/50

Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

公开(公告)号：US20210035781A1

公开(公告)日：2021-02-04

申请号：US16936071

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Vinay Prabhakar ,  Bushra Afzal ,  Badri Ramamurthi ,  Juan C. Rocha

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44

Abstract: A processing chamber may include a gas distribution member, a metal ring member below the gas distribution member, and an isolating assembly coupled with the metal ring member and isolating the metal ring member from the gas distribution member. The isolating assembly may include an outer isolating member coupled with the metal ring member. The outer isolating member may at least in part define a chamber wall. The isolating assembly may further include an inner isolating member coupled with the outer isolating member. The inner isolating member may be disposed radially inward from the metal ring member about an central axis of the processing chamber. The inner isolating member may define a plurality of openings configured to provide fluid access into a radial gap between the metal ring member and the inner isolating member.

公开(公告)号：US20210013069A1

公开(公告)日：2021-01-14

申请号：US16922931

申请日：2020-07-07

Applicant: Applied Materials, Inc.

Inventor： Viren Kalsekar ,  Vinay Prabhakar

IPC: H01L21/67 ,  B65G47/84

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate and defining a plurality of apertures through the plate. The first lid plate may also define a recessed ledge about each aperture. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. Each lid stack may be seated on the first lid plate on a separate recessed ledge of the first lid plate. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may also include a second lid plate coupled with the plurality of lid stacks.

公开(公告)号：US10276364B2

公开(公告)日：2019-04-30

申请号：US15654444

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Zonghui Su ,  Vinay Prabhakar ,  Abdul Aziz Khaja ,  Jeongmin Lee

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  H01L21/3065 ,  B08B7/00 ,  H01J37/32 ,  H01L21/67

Abstract: Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.

公开(公告)号：US11670492B2

公开(公告)日：2023-06-06

申请号：US17071506

申请日：2020-10-15

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Vinay Prabhakar

IPC: H01J37/32

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01J2237/335

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

公开(公告)号：US11515129B2

公开(公告)日：2022-11-29

申请号：US16701986

申请日：2019-12-03

Applicant: Applied Materials, Inc.

Inventor： Elizabeth Neville ,  Satish Radhakrishnan ,  Kartik Shah ,  Vinay Prabhakar ,  Venkata Sharat Chandra Parimi ,  Sungwon Ha

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.

公开(公告)号：US20210320017A1

公开(公告)日：2021-10-14

申请号：US16844121

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Vinay Prabhakar ,  Badri N. Ramamurthi ,  Viren Kalsekar ,  Tuan A. Nguyen ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports, and each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may include an end effector coupled with the rotatable shaft. The end effector may include a central hub defining a central aperture fluidly coupled with a purge source. The end effector may also include a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports.

公开(公告)号：US20230298870A1

公开(公告)日：2023-09-21

申请号：US18324688

申请日：2023-05-26

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Vinay Prabhakar

IPC: H01J37/32

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01J2237/335

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.