公开(公告)号：US11670492B2

公开(公告)日：2023-06-06

申请号：US17071506

申请日：2020-10-15

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Vinay Prabhakar

IPC: H01J37/32

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01J2237/335

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

公开(公告)号：US11133212B2

公开(公告)日：2021-09-28

申请号：US16381986

申请日：2019-04-11

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Jun Ma ,  Hyung Je Woo ,  Fei Wu ,  Jian Li

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.

公开(公告)号：US20230265562A1

公开(公告)日：2023-08-24

申请号：US17677106

申请日：2022-02-22

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Tae Kyung Won ,  Yu-Min Wang ,  Young Dong Lee

IPC: C23C16/513 ,  C23C16/30

CPC classification number: C23C16/513 ,  C23C16/308

Abstract: Exemplary methods of forming a silicon-oxygen-and-nitrogen-containing barrier layer are described. The methods include flowing deposition gases into a substrate processing region of a processing chamber, where the deposition gases include a silicon-containing gas and a nitrogen-containing gas. A deposition plasma is generated from the deposition gases in the substrate processing region. A silicon-oxygen-and-nitrogen-containing layer is deposited on a substrate from the deposition plasma, where the silicon-oxygen-and-nitrogen-containing layer is characterized by thickness of less than or about 2000 Å. The methods further include exposing a surface of the silicon-oxygen-and-nitrogen-containing layer to a treatment plasma to form a treated silicon-oxygen-and-nitrogen-containing layer, where the treatment plasma is formed from a nitrogen-containing gas and is silicon free.

公开(公告)号：US20220122823A1

公开(公告)日：2022-04-21

申请号：US17071506

申请日：2020-10-15

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Vinay Prabhakar

IPC: H01J37/32

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

公开(公告)号：US11875969B2

公开(公告)日：2024-01-16

申请号：US16856917

申请日：2020-04-23

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Vinay K. Prabhakar ,  Ganesh Balasubramanian

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32055 ,  H01J37/32899 ,  H01J37/3435 ,  H01J37/3438

Abstract: A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.

公开(公告)号：US20230298870A1

公开(公告)日：2023-09-21

申请号：US18324688

申请日：2023-05-26

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Vinay Prabhakar

IPC: H01J37/32

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01J2237/335

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.