公开(公告)号：US10276364B2

公开(公告)日：2019-04-30

申请号：US15654444

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Zonghui Su ,  Vinay Prabhakar ,  Abdul Aziz Khaja ,  Jeongmin Lee

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  H01L21/3065 ,  B08B7/00 ,  H01J37/32 ,  H01L21/67

Abstract: Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.

公开(公告)号：US10599043B2

公开(公告)日：2020-03-24

申请号：US15675101

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： Hiroyuki Ogiso ,  Jianhua Zhou ,  Zonghui Su ,  Juan Carlos Rocha-Alvarez ,  Jeongmin Lee ,  Karthik Thimmavajjula Narasimha ,  Rick Gilbert ,  Sang Heon Park ,  Abdul Aziz Khaja ,  Vinay Prabhakar

IPC: H01L21/26 ,  H01L21/66 ,  G03F7/20 ,  G03F7/16 ,  H01L21/02 ,  H01L21/683 ,  C23C16/52 ,  H01L21/12

Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.