公开(公告)号：US20040190215A1

公开(公告)日：2004-09-30

申请号：US10767792

申请日：2004-01-28

Applicant: Applied Materials, Inc.

Inventor： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC: H02H001/00

CPC classification number: H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

Abstract translation: 静电卡盘包括电介质构件，其包括（i）包含半导体材料的第一层，和（ii）第一层上的第二层，第二层包括绝缘材料。 绝缘材料具有比半导体材料更高的电阻。 电介质构件中的电极可充电以产生静电力。 卡盘在等离子体工艺中的处理期间用于保持诸如半导体晶片的基板。

公开(公告)号：US20030010640A1

公开(公告)日：2003-01-16

申请号：US09905513

申请日：2001-07-13

Applicant: Applied Materials, Inc.

Inventor： Arnold Kholodenko

IPC: C25D005/00 ,  H01R013/52 ,  C25D017/04 ,  C25D017/16 ,  C25D017/06

CPC classification number: H01L21/67126 ,  C25D7/12 ,  C25D17/004 ,  C25D17/06

Abstract: An electrochemical deposition method and apparatus that encapsulates a substrate's edge to prevent deposition thereon is generally provided. In one embodiment, the apparatus includes a contact ring, one or more electrical contact pads disposed on the contact ring and a thrust plate axially movable relative to the contact ring. A first seal is disposed inward of the contact pad and seals with the contact ring. A second seal is coupled to the thrust plate. The first and second seals are adapted to sandwich the substrate therebetween when the contact ring and the thrust plate are moved towards each other. In another embodiment, a third seal provides a seal between the thrust plate and contact ring, and, with the first and second seals, defines an exclusion zone encapsulating the substrate's edge. One or more electrical contact pads are protected from the electrolyte by being disposed within the exclusion zone.

Abstract translation: 通常提供封装基板边缘以防止其上沉积的电化学沉积方法和装置。 在一个实施例中，该装置包括接触环，设置在接触环上的一个或多个电接触垫和相对于接触环可轴向移动的止推板。 第一密封件设置在接触垫的内侧并与接触环密封。 第二密封件联接到推力板。 当接触环和止推板彼此移动时，第一和第二密封件适于将基板夹在其间。 在另一个实施例中，第三密封件在推力板和接触环之间提供密封，并且与第一和第二密封件一起限定封装衬底边缘的排除区域。 一个或多个电接触垫通过设置在排除区内而被保护免于电解质。

公开(公告)号：US20030010641A1

公开(公告)日：2003-01-16

申请号：US10061126

申请日：2002-01-30

Applicant: Applied Materials, Inc.

Inventor： Arnold Kholodenko

IPC: C25C007/00 ,  C25B009/00 ,  C25D017/00 ,  C22F001/00 ,  C25D005/00

CPC classification number: H01L21/67126 ,  C25D7/12 ,  C25D17/004 ,  C25D17/06

Abstract: An electro-chemical deposition apparatus and method of fabricating the same is generally provided. In one embodiment, the apparatus includes an annular conductive body adapted to support a substrate and at least one electrical contact pin adapted to electrically bias the substrate. The electrical contact pin has a portion that is brazed into a pin receiving pocket formed in the conductive body. A method of fabricating a contact ring utilized for substrate plating includes the steps of inserting a portion of at least one contact pin in a pin receiving pocket formed in an annular conductive body to form an assembly and brazing the contact pin to the conductive body in a manner that excludes gases between the inserted portion of the contact pin and the pin receiving pocket.

Abstract translation: 通常提供电化学沉积装置及其制造方法。 在一个实施例中，该装置包括适于支撑衬底的环形导电体和适于电气偏置衬底的至少一个电接触针。 电接触针具有钎焊到形成在导电体中的销接收凹部中的部分。 制造用于衬底镀覆的接触环的方法包括将至少一个接触销的一部分插入形成在环形导电体中的销接收槽中以形成组件并将接触销钎焊到导电体的步骤 排除了接触销的插入部分和销接收口袋之间的气体的方式。

公开(公告)号：US20020075624A1

公开(公告)日：2002-06-20

申请号：US09929806

申请日：2001-08-13

Applicant: Applied Materials, Inc.

Inventor： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC: H05F001/00

CPC classification number: C04B37/026 ,  C04B37/006 ,  C04B37/021 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/36 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/401 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/61 ,  C04B2237/62 ,  C04B2237/64 ,  C04B2237/74 ,  H01L21/6831 ,  H01L21/6833

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about null30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract translation: 用于保持基板的静电卡盘具有静电部件，该静电部件具有覆盖可以静电保持基板的电极的电介质。 接合层具有在静电部件和基体之间渗透或钎焊的金属层。 该基底可以是陶瓷和金属的复合材料，该复合材料的热膨胀系数在静电构件的热膨胀系数的±30％以内。 基座也可以具有加热器。

公开(公告)号：US20010024349A1

公开(公告)日：2001-09-27

申请号：US09866353

申请日：2001-05-24

Applicant: Applied Materials, Inc.

Inventor： Shamouil Shamoulian ,  Arnold Kholodenko ,  Senh Thach ,  Wing Cheng

IPC: H02N013/00

CPC classification number: H02N13/00 ,  Y10T29/49149

Abstract: A method of fabricating a semiconductor wafer support chuck apparatus having a first sintered layer and a second sintered layer. The method comprising the steps of providing the first sintered layer having a plurality of gas distribution ports and providing the second sintered layer having a plurality of grooves. The first sintered layer is stacked on top of the second sintered layer, where a diffusion bonding layer is disposed between the first sintered layer and the second sintered layer. Thereafter, the stacked first and second sintered layers are resintered such that the diffusion bonding layer joins the first and second sintered layers together to form a semiconductor wafer support apparatus.

Abstract translation: 一种制造具有第一烧结层和第二烧结层的半导体晶片支撑卡盘装置的方法。 该方法包括以下步骤：提供具有多个气体分配端口的第一烧结层，并提供具有多个凹槽的第二烧结层。 第一烧结层堆叠在第二烧结层的顶部，在第一烧结层和第二烧结层之间设置扩散接合层。 然后，堆叠的第一和第二烧结层重新烧结，使得扩散接合层将第一和第二烧结层与第二烧结层结合在一起形成半导体晶片支撑装置。

公开(公告)号：US20040081439A1

公开(公告)日：2004-04-29

申请号：US10692901

申请日：2003-10-24

Applicant: Applied Materials, Inc.

Inventor： Arnold Kholodenko ,  Senh Thach ,  Dennis Grimard

IPC: A21B002/00

CPC classification number: H01L21/67248

Abstract: An apparatus for controlling a temperature of a substrate during semiconductor substrate processing including a semiconductor substrate processing chamber and a substrate support disposed in the chamber. The substrate support includes heater electrode adapted for connection to a power source and disposed within the substrate support, and a meter coupled to the heater electrode for measuring resistivity of the heater electrode as an indicator of the temperature of the heater electrode. A controller is also coupled to the meter and the power source wherein the controller regulates power distribution from the power source to the heater electrode based upon a temperature of the heater electrode, where the temperature is determined from a measured resistivity of the heater electrode.

Abstract translation: 一种用于在半导体衬底处理期间控制衬底的温度的装置，包括设置在腔室中的半导体衬底处理室和衬底支撑件。 衬底支撑件包括适于连接到电源并设置在衬底支撑件内的加热器电极，以及耦合到加热器电极的仪表，用于测量加热器电极的电阻率，作为加热器电极温度的指示。 控制器还耦合到仪表和电源，其中控制器基于加热器电极的温度来调节从电源到加热器电极的功率分布，其中温度根据加热器电极的测量电阻率确定。

公开(公告)号：US20020171994A1

公开(公告)日：2002-11-21

申请号：US09861984

申请日：2001-05-15

Applicant: Applied Materials, Inc.

Inventor： Dennis Grimard ,  Arnold Kholodenko ,  Alex Veytser ,  Senh Thach ,  Wing Cheng

IPC: H02N013/00

CPC classification number: H01L21/67109 ,  H01L21/67103

Abstract: An apparatus for reducing by-product formation in a semiconductor wafer-processing chamber. In a first embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange. A collar is disposed over the peripheral flange defining a first gap therebetween, and circumscribes the chuck. A heater element is embedded within the collar and adapted for connection to a power source. In a second embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, and a collar having a heater element embedded therein. The collar is disposed over the peripheral flange to define a gap therebetween, and circumscribes the chuck. Moreover, a pedestal having a gas delivery system therein is disposed below the chuck and collar. In a third embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, a collar, and a waste ring having a heater element embedded therein. The waste ring is disposed over the peripheral flange defining a gap therebetween, and circumscribes the chuck. The collar is chucked to the waste ring, and the waste ring is chucked to a pedestal support. Moreover, the waste ring and pedestal each have a gas delivery system therein for regulating the temperature of the collar.

Abstract translation: 一种用于减少半导体晶片处理室中副产物形成的装置。 在第一实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘。 套环设置在周边凸缘之上，限定了它们之间的第一间隙，并限制卡盘。 加热器元件嵌入在轴环内并且适于连接到电源。 在第二实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘以及嵌入其中的加热器元件的套环。 套环设置在周边凸缘上方以在其间形成间隙并限制卡盘。 此外，其中具有气体输送系统的基座设置在卡盘和轴环的下方。 在第三实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘，套环和具有嵌入其中的加热器元件的废料环的卡盘。 废环设置在周边凸缘之上，限定了它们之间的间隙，并且围绕卡盘。 将衣领卡在废物环上，将废物环卡在基座支架上。 此外，废环和底座各自具有用于调节套环温度的气体输送系统。

公开(公告)号：US20020135969A1

公开(公告)日：2002-09-26

申请号：US10095914

申请日：2002-03-12

Applicant: Applied Materials, Inc.

Inventor： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC: H01H001/00

CPC classification number: H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract translation: 静电吸盘具有能够带电的电极，以静电保持基板。 复合层覆盖电极。 复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成 材料。 卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。