公开(公告)号：US20240301552A1

公开(公告)日：2024-09-12

申请号：US18119432

申请日：2023-03-09

Applicant: APPLIED MATERIALS, INC. ,  The Regents of the University of California

Inventor： Harshil Kashyap ,  Andrew C. Kummel ,  Ajay Kumar Yadav ,  Keith T. Wong ,  Srinivas Nemani ,  Ellie Yieh

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/24 ,  C23C16/40 ,  C23C16/45546 ,  C23C16/45553

Abstract: Described herein is a method for performing an atomic layer deposition process to form a silicon doped oxide film on a surface of the substrate. The oxide film may be a hafnium-zirconium oxide film, or a zirconium oxide film. The atomic layer deposition process may include forming the oxide layers and a silicon layer using a hydrogen peroxide as at least one of the precursors used in formation of the oxide layers.

公开(公告)号：US11542597B2

公开(公告)日：2023-01-03

申请号：US16902665

申请日：2020-06-16

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC: C23C16/455 ,  C23C16/40 ,  C23C28/04

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US09824889B2

公开(公告)日：2017-11-21

申请号：US14686870

申请日：2015-04-15

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Andrew C. Kummel ,  Mary Edmonds ,  Mei Chang ,  Jessica S. Kachian

IPC: C23C16/24 ,  H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/02658

Abstract: Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

公开(公告)号：US11993842B2

公开(公告)日：2024-05-28

申请号：US18072392

申请日：2022-11-30

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC: C23C16/455 ,  C23C16/40 ,  C23C28/04

CPC classification number: C23C16/405 ,  C23C16/45523 ,  C23C28/04

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US10297441B2

公开(公告)日：2019-05-21

申请号：US15674108

申请日：2017-08-10

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Steven Wolf ,  Mary Edmonds ,  Andrew C. Kummel ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L21/02 ,  H01L29/51 ,  C23C16/46 ,  C23C16/455 ,  C23C16/34

Abstract: Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.

公开(公告)号：US11993845B2

公开(公告)日：2024-05-28

申请号：US16809318

申请日：2020-03-04

Applicant: Applied Materials, Inc.

Inventor： Jong Choi ,  Christopher Ahles ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45553 ,  C23C16/401 ,  C23C16/4583 ,  H01L21/02142 ,  H01L21/0228 ,  H01L21/28518 ,  H01L21/02211

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

公开(公告)号：US11664215B2

公开(公告)日：2023-05-30

申请号：US16802290

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Christopher Ahles ,  Jong Choi ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02186 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02205

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.

公开(公告)号：US20200283898A1

公开(公告)日：2020-09-10

申请号：US16809318

申请日：2020-03-04

Applicant: Applied Materials, Inc. ,  The Regents of the Univeristy of California

Inventor： Jong Choi ,  Christopher Ahles ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C23C16/40 ,  C23C16/458

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

公开(公告)号：US09305780B2

公开(公告)日：2016-04-05

申请号：US14561525

申请日：2014-12-05

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Mary Edmonds ,  Andrew C. Kummel ,  Atif M. Noori

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/24 ,  C23C16/45523 ,  H01L21/02123 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/0262 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

Abstract translation: 在半导体或金属表面上沉积硅的方法包括在50℃和300℃之间的温度下循环给予硅烷和氯代硅烷前体，并在三到二十三个循环之间持续循环，直到通过终止 具有Si-H基团的表面位点。 层形成方法包括在衬底上沉积氯硅烷以形成第一层，其中衬底选自In x Ga 1-x As，In x Ga 1-x Sb，In x Ga 1-x N，Si Ge和Ge，其中X在0.1和 0.99。 所述方法可以包括脉动硅烷以形成硅单层并循环给予氯硅烷和硅烷。 层状组合物包括选自In x Ga 1-x As，In x Ga 1-x Sb，In x Ga 1-x N，Si Ge和Ge中的第一层，其中X为0.1至0.99，第二层为第二层，其中第二层包含Si-H 和Si-OH。

公开(公告)号：US20240120195A1

公开(公告)日：2024-04-11

申请号：US17960979

申请日：2022-10-06

Applicant: Applied Materials, Inc. ,  Regents of the University of California

Inventor： Keith T. Wong ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Andrew C. Kummel ,  Yunil Cho ,  James Huang

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02123 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/67017

Abstract: A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.