公开(公告)号：US10586707B2

公开(公告)日：2020-03-10

申请号：US16189429

申请日：2018-11-13

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  C23C16/46 ,  C23C16/42 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

公开(公告)号：US11993845B2

公开(公告)日：2024-05-28

申请号：US16809318

申请日：2020-03-04

Applicant: Applied Materials, Inc.

Inventor： Jong Choi ,  Christopher Ahles ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45553 ,  C23C16/401 ,  C23C16/4583 ,  H01L21/02142 ,  H01L21/0228 ,  H01L21/28518 ,  H01L21/02211

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

公开(公告)号：US11664215B2

公开(公告)日：2023-05-30

申请号：US16802290

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Christopher Ahles ,  Jong Choi ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02186 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02205

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.

公开(公告)号：US20200283898A1

公开(公告)日：2020-09-10

申请号：US16809318

申请日：2020-03-04

Applicant: Applied Materials, Inc. ,  The Regents of the Univeristy of California

Inventor： Jong Choi ,  Christopher Ahles ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C23C16/40 ,  C23C16/458

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

公开(公告)号：US10475655B2

公开(公告)日：2019-11-12

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas Nemani ,  Ellie Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.