公开(公告)号：US20100248488A1

公开(公告)日：2010-09-30

申请号：US12711061

申请日：2010-02-23

申请人： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

发明人： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

摘要： Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.

摘要翻译： 通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。 通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。

公开(公告)号：US08382999B2

公开(公告)日：2013-02-26

申请号：US12711061

申请日：2010-02-23

申请人： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

发明人： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

摘要： Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.

摘要翻译： 通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。 通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。

公开(公告)号：US20100018648A1

公开(公告)日：2010-01-28

申请号：US12178032

申请日：2008-07-23

申请人： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

发明人： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

IPC分类号： H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32623 ,  H01J2237/2001 ,  H01L21/6833

摘要： In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.

摘要翻译： 在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。 由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度 改变等离子体条件。

公开(公告)号：US08404598B2

公开(公告)日：2013-03-26

申请号：US12851606

申请日：2010-08-06

申请人： Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

发明人： Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

IPC分类号： H01L21/302

CPC分类号： C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

摘要： Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

公开(公告)号：US20180308663A1

公开(公告)日：2018-10-25

申请号：US15960372

申请日：2018-04-23

申请人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

发明人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC分类号： H01J37/32 ,  C23C16/455

CPC分类号： H01J37/32137 ,  C23C16/45536 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support, each filament including a conductor surrounded by a cylindrical insulating shell, and an RF power source configured to apply a first RF signal to at least some of the plurality of filaments, to apply a second RF signal of equal frequency to at least some of the plurality of filaments, and to modulate a phase offset between the first RF signal and the second RF signal.

公开(公告)号：US20130098882A1

公开(公告)日：2013-04-25

申请号：US13595292

申请日：2012-08-27

申请人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

发明人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC分类号： B23K15/00

CPC分类号： H01J37/3233 ,  G21K5/00 ,  H05H1/46 ,  H05H7/001

摘要： A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.

摘要翻译： 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。

公开(公告)号：US20130098873A1

公开(公告)日：2013-04-25

申请号：US13595655

申请日：2012-08-27

申请人： Kartik Ramaswamy ,  Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf

发明人： Kartik Ramaswamy ,  Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32541

摘要： A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.

摘要翻译： 等离子体反应器具有用于在位于顶棚顶板和工件支撑表面之间的加工区域内加工工件的主室，所述反应器具有塔顶电子束源，其产生通过主体的天花板流入处理区域的电子束 房间。

公开(公告)号：US20130098552A1

公开(公告)日：2013-04-25

申请号：US13595252

申请日：2012-08-27

申请人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

发明人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC分类号： C23F1/08

CPC分类号： H01J37/3233 ,  H01J2237/06366

摘要： A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity.

摘要翻译： 依靠电子束作为等离子体源的等离子体反应器采用电子束源中的形状电子束提取栅格来改善均匀性。

公开(公告)号：US20120034136A1

公开(公告)日：2012-02-09

申请号：US13050481

申请日：2011-03-17

申请人： Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

发明人： Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

IPC分类号： B01J19/08

CPC分类号： H01J37/32091 ,  H01J37/32577 ,  H05H1/46 ,  H05H2001/4622

摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

摘要翻译： 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

公开(公告)号：US20090025878A1

公开(公告)日：2009-01-29

申请号：US11828568

申请日：2007-07-26

申请人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

发明人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC分类号： H01L21/306

CPC分类号： H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

摘要： RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

摘要翻译： 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。