公开(公告)号：US08404598B2

公开(公告)日：2013-03-26

申请号：US12851606

申请日：2010-08-06

申请人： Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

发明人： Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

IPC分类号： H01L21/302

CPC分类号： C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

摘要： Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

公开(公告)号：US20110186545A1

公开(公告)日：2011-08-04

申请号：US12905624

申请日：2010-10-15

申请人： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

发明人： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

IPC分类号： C23F1/08 ,  C23F1/00 ,  C23C16/50 ,  C23C16/458 ,  C23C16/52 ,  G05D23/00

CPC分类号： H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

摘要翻译： 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

公开(公告)号：US09338871B2

公开(公告)日：2016-05-10

申请号：US12905624

申请日：2010-10-15

申请人： Chetan Mahadeswaraswamy ,  Walter R. Merry ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Tina Tsong ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr. ,  Fernando M. Silveira ,  Brad L. Mays ,  Kartik Ramaswamy ,  Hamid Noorbakhsh

发明人： Chetan Mahadeswaraswamy ,  Walter R. Merry ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Tina Tsong ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr. ,  Fernando M. Silveira ,  Brad L. Mays ,  Kartik Ramaswamy ,  Hamid Noorbakhsh

IPC分类号： G01L21/30 ,  G01R31/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/306 ,  C23F1/00 ,  H05H1/00 ,  H01J37/32

CPC分类号： H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

摘要翻译： 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

公开(公告)号：US20110031216A1

公开(公告)日：2011-02-10

申请号：US12851606

申请日：2010-08-06

申请人： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

发明人： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

IPC分类号： C23F1/00

CPC分类号： C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

摘要： Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。

公开(公告)号：US20140224767A1

公开(公告)日：2014-08-14

申请号：US14179749

申请日：2014-02-13

申请人： Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Yang YANG ,  Duy D. NGUYEN ,  Justin PHI

发明人： Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Yang YANG ,  Duy D. NGUYEN ,  Justin PHI

IPC分类号： C23F1/08 ,  C23C16/50

CPC分类号： H01J37/3299 ,  C23C14/54 ,  C23C16/52

摘要： Methods and systems for adapting and/or tuning feedforward control parameters in a plasma processing chamber. In embodiments, a dependent process parameter, such as a chamber component temperature, is controlled with a feedforward control algorithm based on one or more independent process parameters, such as RF power. A control algorithm may calculate steady-state deviation of the dependent parameter from a process recipe setpoint, estimate an amount by which an existing control gain coefficient is to be changed to better achieve the setpoint, associate the new control gain coefficient with the particular recipe operation, and store the new control gain coefficient for subsequent execution of the recipe operation. In embodiments, the amount by which a gain coefficient is to be changed is based on a model function derived from a lookup table associating gain coefficients with setpoints of the dependent process parameter and values of the independent process parameter.

摘要翻译： 用于在等离子体处理室中适配和/或调谐前馈控制参数的方法和系统。 在实施例中，使用基于一个或多个独立过程参数（例如RF功率）的前馈控制算法来控制依赖过程参数，例如腔室部件温度。 控制算法可以计算依赖参数与过程配方设定点的稳态偏差，估计要改变现有控制增益系数以更好地实现设定点的量，将新的控制增益系数与特定配方操作相关联 并存储新的控制增益系数用于后续执行配方操作。 在实施例中，增益系数将被改变的量是基于从增益系数与依赖过程参数的设定点和独立过程参数的值相关联的查找表导出的模型函数。

公开(公告)号：US06898065B2

公开(公告)日：2005-05-24

申请号：US10205991

申请日：2002-07-26

申请人： Brad Mays ,  Tetsuya Ishikawa ,  Sergio Fukuda Shoji

发明人： Brad Mays ,  Tetsuya Ishikawa ,  Sergio Fukuda Shoji

IPC分类号： H01L21/683 ,  H01T23/00

CPC分类号： H01L21/6833

摘要： A method and apparatus for a mixed-mode operation of an electrostatic chuck in a semiconductor substrate processing system. The chuck is operated in a voltage mode before and after a processing and is operated in a current mode during the processing to suppress arcing during the processing of a substrate.

摘要翻译： 一种用于半导体衬底处理系统中的静电卡盘的混合模式操作的方法和装置。 卡盘在处理之前和之后以电压模式操作，并且在处理期间以电流模式操作以在基板的处理期间抑制电弧。

公开(公告)号：US20160148822A1

公开(公告)日：2016-05-26

申请号：US14555467

申请日：2014-11-26

申请人： Phillip Criminale ,  Justin Phi ,  Dan A. Marohl ,  Sergio Fukuda Shoji ,  Brad L. Mays

发明人： Phillip Criminale ,  Justin Phi ,  Dan A. Marohl ,  Sergio Fukuda Shoji ,  Brad L. Mays

IPC分类号： H01L21/67 ,  H01L21/66 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01L21/67248 ,  H01J37/32724 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6831

摘要： A substrate carrier is described that uses a proportional thermal fluid delivery system In one example the apparatus includes a heat exchanger to provide a thermal fluid to a fluid channel of a substrate carrier and to receive the thermal fluid from the fluid channel, the thermal fluid in the fluid channel to control the temperature of the carrier during substrate processing. A proportional valve controls the rate of flow of thermal fluid from the heat exchanger to the fluid channel, A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve in response to the measured temperature to adjust the rate of flow.

摘要翻译： 描述了使用比例热流体输送系统的衬底载体。在一个示例中，该装置包括热交换器，以将热流体提供给衬底载体的流体通道并从流体通道接收热流体， 流体通道，用于在衬底处理期间控制载体的温度。 比例阀控制从热交换器到流体通道的热流体的流速。温度控制器从载体的热传感器接收测量的温度，并根据测量的温度控制比例阀，以调节速度 流。