摘要:
A backside coating prevention device adapted for a coating chamber for coating plate-shaped substrates is provided, said coating chamber being adapted for coating continuously or discontinuously transported plate-shaped substrates, comprising a front wall having a substrate feeding opening and a rear wall having a substrate discharge opening, a coating material source adapted for dispensing coating material into the coating chamber, and a transport system, a front side of the transport system facing the coating material source, the transport system being adapted for continuously or discontinuously transporting a plurality of plate-shaped substrates along a transport path on the front side of the transport system, wherein said backside coating prevention device is adapted for providing a gas barrier at the front side of the transport system and adjacent to the backsides of the plurality of plate-shapes substrates for preventing backside coating of the plate-shaped substrates.
摘要:
A gas supply system 20 for supplying a gas into a pumping system 10 is provided, the pumping system including a plurality of pumping means 14, 16, the gas supply system comprising a gas inlet 22 and plurality of gas conduits 24, 25 fluidly connected to the gas inlet and each having a gas outlet 27, 28 fluidly connectable to the pumping system 10, wherein the gas outlets of the plurality of gas conduits are in parallel fluidly connectable to the pumping system and each gas conduit is provided with a gradient adjustment means adapted to provide at least one gradient of gas amount supplied to the pumping system.
摘要:
A lock chamber for a substrate processing system is provided which includes at least a first conduit adapted to provide an inner portion of the lock chamber in fluid communication with atmospheric pressure or overpressure. Additionally, the lock chamber includes at least a first control valve for controlling a flow rate of the fluid communication of the inner portion of the chamber with the atmospheric pressure or the overpressure, wherein the control valve is adapted to continuously control the flow rate. Furthermore, an according method, a computer program and a computer readable medium adapted for performing the method is provided.
摘要:
A apparatus for vacuum sputter deposition is described. The apparatus includes, a vacuum chamber; three or more sputter cathodes within the vacuum chamber for sputtering material on a substrate; a gas distribution system for providing a processing gas including H2 to the vacuum chamber; a vacuum system for providing a vacuum inside the vacuum chamber; and a safety arrangement for reducing the risk of an oxy-hydrogen explosion, wherein the safety arrangement comprises a dilution gas feeding unit connected to the vacuum system for dilution of the H2-content of the processing gas.
摘要:
A lock chamber for a substrate processing system is provided which includes at least a first conduit adapted to provide an inner portion of the lock chamber in fluid communication with atmospheric pressure or overpressure. Additionally, the lock chamber includes at least a first control valve for controlling a flow rate of the fluid communication of the inner portion of the chamber with the atmospheric pressure or the overpressure, wherein the control valve is adapted to continuously control the flow rate. Furthermore, an according method, a computer program and a computer readable medium adapted for performing the method is provided.