Abstract:
A source-collector device includes a target unit having a target surface of plasma-forming material and a laser unit to generate a beam of radiation directed onto the target surface to form a plasma from said plasma-forming material. A contaminant trap is provided to reduce propagation of particulate contaminants generated by the plasma. A radiation collector includes a one or more grazing-incidence reflectors arranged to collect radiation emitted by the plasma and form a beam therefrom, and a filter is configured to attenuate at least one wavelength range of the beam.
Abstract:
A grazing incidence reflector (300) for EUV radiation includes a first mirror layer (310) and a multilayer mirror structure (320) beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.
Abstract:
A radiation collector comprising a first collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a first location at a distance from the radiation collector, a second collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a second location at said distance from the radiation collector, wherein the first location and the second location are separated from one another.
Abstract:
A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.
Abstract:
A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.
Abstract:
A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
Abstract:
An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.
Abstract:
A source-collector device is constructed and arranged to generate a radiation beam, The device includes a target unit constructed and arranged to present a target surface of plasma-forming material; a laser unit constructed and arranged to generate a beam of radiation directed onto the target surface so as to form a plasma from said plasma-forming material; a contaminant trap constructed and arranged to reduce propagation of particulate contaminants generated by the plasma; a radiation collector comprising a plurality of grazing-incidence reflectors arranged to collect radiation emitted by the plasma and form a beam therefrom; and a filter constructed and arranged to attenuate at least one wavelength range of the beam.
Abstract:
A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).
Abstract:
A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.