公开(公告)号：US20180053659A1

公开(公告)日：2018-02-22

申请号：US15552754

申请日：2016-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Tapash CHAKRABORTY ,  Prerna GORADIA ,  Robert Jan VISSER

IPC: H01L21/285 ,  C23C16/24 ,  C30B25/16 ,  C23C16/30 ,  C23C16/455 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02

CPC classification number: H01L21/28518 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/505 ,  C23C16/56 ,  C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  H01L21/0262 ,  H01L21/02636

Abstract: Methods for selective dielectric deposition using self-assembled monolayer (SAM) are provided herein. A method of selectively depositing a low-k dielectric layer atop a substrate having an exposed silicon surface and an exposed silicon-containing surface, includes: (a) growing an organosilane based self-assembled monolayer atop the exposed silicon-containing surface, wherein the organosilane based self-assembled monolayer is thermally stable at a first temperature of greater than about 300 degrees Celsius; and (b) selectively depositing a low-k dielectric layer atop the exposed silicon surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the low-k dielectric layer atop the silicon-containing surface.

公开(公告)号：US20170062210A1

公开(公告)日：2017-03-02

申请号：US14842806

申请日：2015-09-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Robert Jan VISSER ,  Ranga Rao ARNEPALLI ,  Prerna GORADIA

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/56 ,  C23C16/02 ,  C23C16/24

CPC classification number: H01L21/02271 ,  C23C16/0227 ,  C23C16/0236 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02043 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76883

Abstract: A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.

Abstract translation: 一种处理方法包括：将具有布置在铜表面上的污染物质的基底提供到热线化学气相沉积（HWCVD）室内的基底支撑件; 向HWCVD室提供氢气（H 2）; 将设置在HWCVD室中的一个或多个细丝加热到足以解离氢（H 2）气体的温度; 将基底暴露于解离的氢（H 2）气体以从铜表面去除至少一些污染物质; 将一根或多根细丝冷却至室温; 将HWCVD室中的衬底暴露于一个或多个化学前体以在铜表面顶部沉积自组装单层; 以及在所述衬底顶上沉积第二层。

公开(公告)号：US20180033643A1

公开(公告)日：2018-02-01

申请号：US15552207

申请日：2016-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Vijay Bhan SHARMA ,  Ranga Rao ARNEPALLI ,  Prerna GORADIA ,  Robert Jan VISSER

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/32135 ,  H01L21/02244 ,  H01L21/306 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6838

Abstract: Improved methods and apparatus for removing a metal nitride selectively with respect to exposed or underlying dielectric or metal layers are provided herein. In some embodiments, a method of etching a metal nitride layer atop a substrate, includes: (a) oxidizing a metal nitride layer to form a metal oxynitride layer (MN1-xOx) at a surface of the metal nitride layer, wherein M is one of titanium or tantalum and x is an integer from 0.05 to 0.95; and (b) exposing the metal oxynitride layer (MN1-xOx) to a process gas, wherein the metal oxynitride layer (MN1-xOx) reacts with the process gas to form a volatile compound which desorbs from the surface of the metal nitride layer.

公开(公告)号：US20170316946A1

公开(公告)日：2017-11-02

申请号：US15459536

申请日：2017-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Geetika BAJAJ ,  Ravindra PATIL ,  Prerna GORADIA ,  Robert Jan VISSER

IPC: H01L21/3065 ,  H01L21/322 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L21/02043 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/322 ,  H01L21/67017 ,  H01L21/67069

Abstract: Improved methods for chemically etching silicon are provided herein. In some embodiments, a method of etching a silicon material includes: (a) exposing the silicon material to a halogen-containing gas; (b) evacuating the halogen-containing gas from the semiconductor processing chamber; (c) exposing the silicon material to an amine vapor to etch a monolayer of the silicon material; (d) evacuating the amine vapor from the semiconductor processing chamber and; (e) optionally repeating (a)-(d) to etch the silicon material to a predetermined thickness.