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    METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT
    1.
    发明申请
    METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT 有权

    公开(公告)号：US20210317580A1

    公开(公告)日：2021-10-14

    申请号：US16848784

    申请日：2020-04-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Shi YOU ,  He REN ,  Naomi YOSHIDA ,  Nikolaos BEKIARIS ,  Mehul NAIK ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Mei-Yee SHEK

    IPC: C23C16/56 ,  H01L21/768

    Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material

    PLASMA TREATMENT PROCESS TO DENSIFY OXIDE LAYERS
    3.
    发明申请
    PLASMA TREATMENT PROCESS TO DENSIFY OXIDE LAYERS 有权

    公开(公告)号：US20240404823A1

    公开(公告)日：2024-12-05

    申请号：US18803673

    申请日：2024-08-13

    Applicant: Applied Materials, Inc.

    Inventor： Jung chan LEE ,  Mun Kyu PARK ,  Jun LEE ,  Euhngi LEE ,  Kyu-Ha SHIM ,  Deven Matthew Raj MITTAL ,  Sungho JO ,  Timothy MILLER ,  Jingmei LIANG ,  Praket Prakash JHA ,  Sanjay G. KAMATH

    IPC: H01L21/02

    Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma and directing the first plasma to the oxide layer. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma and directing the second plasma to the treated oxide layer. The densified oxide layer has a final WER of less than one-half of the initial WER.

    PLASMA TREATMENT PROCESS TO DENSIFY OXIDE LAYERS
    6.
    发明申请
    PLASMA TREATMENT PROCESS TO DENSIFY OXIDE LAYERS 有权

    公开(公告)号：US20230030436A1

    公开(公告)日：2023-02-02

    申请号：US17390151

    申请日：2021-07-30

    Applicant: Applied Materials, Inc.

    Inventor： Jung Chan LEE ,  Mun Kyu PARK ,  Jun LEE ,  Euhngi LEE ,  Kyu-Ha SHIM ,  Deven Matthew Raj MITTAL ,  Sungho JO ,  Timothy MILLER ,  Jingmei LIANG ,  Praket Prakash JHA ,  Sanjay G. KAMATH

    IPC: H01L21/02

    Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

    POLYSILICON LINERS
    9.
    发明申请
    POLYSILICON LINERS 审中-公开

    公开(公告)号：US20200266052A1

    公开(公告)日：2020-08-20

    申请号：US16795191

    申请日：2020-02-19

    Applicant: Applied Materials, Inc.

    Inventor： Krishna NITTALA ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Praket Prakash JHA ,  Jinrui GUO ,  Jingmei LIANG

    IPC: H01L21/02

    Abstract: Aspects of the disclosure provide a method including depositing an underlayer comprising silicon oxide over a substrate, depositing a polysilicon liner on the underlayer, and depositing an amorphous silicon layer on the polysilicon liner. Aspects of the disclosure provide a device intermediate including a substrate, an underlayer comprising silicon oxide formed over the substrate, a polysilicon liner disposed on the underlayer, and an amorphous silicon layer disposed on the polysilicon liner.

    CURE METHOD FOR CROSS-LINKING SI-HYDROXYL BONDS
    10.
    发明申请
    CURE METHOD FOR CROSS-LINKING SI-HYDROXYL BONDS 审中-公开

    公开(公告)号：US20200171536A1

    公开(公告)日：2020-06-04

    申请号：US16692841

    申请日：2019-11-22

    Applicant: Applied Materials, Inc.

    Inventor： Martin Jay SEAMONS ,  Byung Kook AHN ,  Jingmei LIANG

    IPC: B05D1/00 ,  C23C16/56 ,  B05D3/06

    Abstract: Embodiments described herein provide a method of forming a silicon-and-oxygen-containing layer having covalent Si—O—Si bonds by cross-linking terminal silanol groups. The method includes positioning a substrate in a chamber. The substrate has one or more trenches including a width of 10 nanometers (nm) or less, and an aspect ratio of 2:1 or greater. The aspect ratio is defined by a ratio of a depth to the width of the one or more trenches. A silicon-and-oxygen-containing layer is disposed over the one or more trenches. The silicon-and-oxygen-containing layer has terminal silanol groups. The substrate is heated, and the silicon-and-oxygen-containing layer is exposed to an ammonia or amine group-containing precursor distributed across a process volume.

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